| 大功率半导体器件的发展与展望 |
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| 引用本文： | 钱照明,盛况.大功率半导体器件的发展与展望[J].变流技术与电力牵引,2010(1). |
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| 作者姓名： | 钱照明 盛况 |
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| 作者单位： | 浙江大学; |
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| 摘 要： | 回顾了现代电力电子器件的发展历史,涉及的器件包括晶闸管、GTO、IGCT、MTO、IGBT、各种改进型的IGBT以及CoolMOS。叙述了采用新型材料的电力电子器件的发展和前景,应用碳化硅和氮化镓材料的功率器件正在迅速地发展,一些器件有望在不远的将来实现商品化,进入电力电子技术市场。
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| 关 键 词： | 电力电子器件 碳化硅 氮化镓 发展 展望 |
Development and Perspective of High Power Semiconductor Device |
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| QIAN Zhao-ming,SHENG Kuang.Development and Perspective of High Power Semiconductor Device[J].Converter Technology & Electric Traction,2010(1). |
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| Authors: | QIAN Zhao-ming SHENG Kuang |
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| Institution: | Zhejiang University;Hangzhou;Zhejiang 310027;China |
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| Abstract: | The developing history of modern power electronic device is reviewed, which includes thyristor, GTO, IGCT, MTO, IGBT, improved IGBT and CoolMOS. The development and perspective of power electronic device with novel materials are proposed. The power device applying SiC and GaN is in a speedy growing, some of which will realize commercialization in the near future and enter into the technology market of power electronics. |
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| Keywords: | power electronic device SiC GaN development prospective |
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