| IGCT高压测试台的研制 |
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| 引用本文： | 薛旭恒,张禄,谢路耀.IGCT高压测试台的研制[J].变流技术与电力牵引,2009(1):5-8. |
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| 作者姓名： | 薛旭恒 张禄 谢路耀 |
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| 作者单位： | 北京交通大学新能源研究所; |
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| 摘 要： | 集成门极换流晶闸管（IGCT）是一种新型的电力电子器件，在大功率高压变流器中得到广泛的应用。为了配合开发工作，研制了一种IGCT高压测试台，用来测试4500V／4000A等级以下IGCT器件的特性。几组实验验证了该测试台设计的合理性和可行性。
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| 关 键 词： | IGCT 测试台 电力电子 |
Test Bench for IGCT High Voltage Experiment |
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| XUE Xu-heng,ZHANG Lu,XIE Lu-yao.Test Bench for IGCT High Voltage Experiment[J].Converter Technology & Electric Traction,2009(1):5-8. |
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| Authors: | XUE Xu-heng ZHANG Lu XIE Lu-yao |
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| Institution: | New and Renewable Energy Research Institute;Beijing Jiaotong University;Beijing 100044;China |
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| Abstract: | Integrated Gate Commutated Thyristor(IGCT) is a new type of power electronic semiconductor,which is widely used in high power high voltage converter.A test bench was designed and developed for the IGCT's parameter below 4 500 V/4 000 A ratings.And the rationality and feasibility of the test bench was confirmed by some sets of experiments. |
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| Keywords: | IGCT test bench power electronic |
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