| Ⅲ-Ⅴ族三结抗辐照太阳电池结构的改进初探 |
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| 引用本文： | 石易立.Ⅲ-Ⅴ族三结抗辐照太阳电池结构的改进初探[J].南通航运职业技术学院学报,2011,10(2):58-62. |
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| 作者姓名： | 石易立 |
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| 作者单位： | 南通航运职业技术学院机电系,江苏 南通,226010 |
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| 摘 要： | 文章介绍了Ⅲ-Ⅴ族叠层太阳电池抗辐照设计的基本思路,提出了Ⅲ-Ⅴ族叠层抗辐照太阳电池的两种改进结构p-i-n结构和线性掺杂结构,并探讨分析了这两种结构的物理原理和在抗辐照性能上的优劣,为进一步改善其抗辐射效应作了颇有意义的基础工作。
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| 关 键 词： | 砷化镓 抗辐照设计 p-i-n 线性掺杂 |
Probe into Structure Improvement of Radiation-resistance Triple-junction Solar Cells |
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| SHI Yi-li.Probe into Structure Improvement of Radiation-resistance Triple-junction Solar Cells[J].Journal of Nantong Vocational & Technical Shipping College,2011,10(2):58-62. |
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| Authors: | SHI Yi-li |
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| Institution: | SHI Yi-li(Dept.of Mechatronics,Nantong Vocational & Technical Shipping College,Nantong 226010,China) |
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| Abstract: | The paper introduces the ideas in the design of radiation-resistance GaInP2/InGaAs/Ge triple-junction solar cells,presents two improved structures of InGaAs middle cell,i.e.p-i-n and linear variable doping,and analyzes the advantages and disadvantages respectively in terms of physical principle and radiation-resistance mechanism. |
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| Keywords: | GaAs Design of radiation-resistance p-i-n Linear variable doping |
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