| 一种改进的IGBT稳态解析模型 |
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| 引用本文： | 唐勇,李平.一种改进的IGBT稳态解析模型[J].武汉理工大学学报(交通科学与工程版),2011,35(5). |
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| 作者姓名： | 唐勇 李平 |
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| 作者单位： | 海军工程大学舰船综合电力技术国防科技重点实验室 武汉430033 |
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| 基金项目： | 国家自然科学基金重点项目资助(批准号:50737004) |
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| 摘 要： | 根据IGBT物理结构与基区过剩载流子的分布特点进行半导体物理公式推导,参考现有模型并对其不足之处进行改进,把整个基区分为多个区域并采用不同的边界条件分别求解连续性方程,提出了一种考虑了载流子二维分布的改进的稳态解析模型,较准确地反映了IGBT基区过剩载流子分布,得到了更为准确的V-I特性仿真结果,通过实验验证了该模型的准确性.
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| 关 键 词： | IGBT 静态解析模型 基区过剩载流子 二维分布 |
A Improved IGBT Static State Analytical Model |
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| Tang Yong,Li Ping.A Improved IGBT Static State Analytical Model[J].journal of wuhan university of technology(transportation science&engineering),2011,35(5). |
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| Authors: | Tang Yong Li Ping |
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| Institution: | Tang Yong Li Ping (National Key Laboratory for Vessel Integrated Power System Technology,Naval University of Engineering,Wuhan 430033,China) |
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| Abstract: | Base on IGBT's physical structure and base excess carrier distribution,this paper carried on semiconductor formulary derivation and improved the shortage of the existing model,proposes a new improved IGBT static state analytical model which involve the two-dimensional distribution.This model divides the whole IGBT base into several parts and calculates continuity equation respectively according to different boundary condition,therefore it can get exact base excess carrier distribution and V-I characteristic... |
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| Keywords: | IGBT static analytical model base excess carrier two-dimensional distribution |
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