脉冲开关用 6 英寸高 di/dt 晶闸管的研制

针对脉冲开关用晶闸管对di／dt耐量的高要求，阐述了晶闸管的导通过程和di／dt的失效机理。通过选用适当的硅单晶参数，调整P基区浓度分布，优化门极图形，采用双负角造型工艺，设计并试制出6英寸脉冲开关用晶闸管。该晶闸管的脉冲峰值电流可达300kA，di／dt耐量超过3000A／μs，试验表明其具有良好的稳定性和可靠性。

Development of 6-inch High di/dt Thyristor for Pulse Switch

For the high requirements of the thyristor for pulse switch on di/dt tolerance, the turn-on process and di/dt failure mechanism of thyristor are described. The 6-inch thyristor for pulse switch has been developed by choosing appropriate parameters of silicon wafer, adjusting P-base impurity profile, optimizing gate graph, and using double negative angle bevel. The experiment verifies that the pulse peak current can reach 300 kA, the di/dt rating is more than 3 000 A/μs, and the thyristor has good stability and reliability.