| Subthreshold current model of fully depleted dual material gate SOI MOSFET |
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| 引用本文： | 苏军 李尊朝 张莉丽. Subthreshold current model of fully depleted dual material gate SOI MOSFET[J]. 西安交通大学学报(英文版), 2007, 19(2): 135-137,171 |
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| 作者姓名： | 苏军 李尊朝 张莉丽 |
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| 作者单位： | [1]School of Computer Science, Xi＇an Polytechnic University, Xi＇an 710048, China [2]School of Electronics and Information Engineering, Xi＇an Jiaotong University, Xi＇an 710049, China |
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| 摘 要： |
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| 关 键 词： | 场效应器件 亚阈值电流模型 SOI MOSFET 不对称光环 |
| 文章编号： | 1671-8267（2007）02-0135-03 |
Subthreshold current model of fully depleted dual material gate SOI MOSFET |
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| Su Jun,Li Zunchao,Zhang Lili. Subthreshold current model of fully depleted dual material gate SOI MOSFET[J]. Academic Journal of Xi’an Jiaotong University, 2007, 19(2): 135-137,171 |
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| Authors: | Su Jun Li Zunchao Zhang Lili |
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| Abstract: | Dual material gate SOI MOSFET with asymmetrical halo can suppress short channel effect and increase carriers transport efficiency. The analytical model of its subthreshold drain current is derived based on the explicit solution of two-dimensional PoissonCs equation in the depletion region. The model takes into consideration the channel length modulation effect and the contribution of the back channel current component. Its validation is verified by comparision with two dimensional device simulator MEDICI. |
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| Keywords: | asymmetrical halo dual material gate subthreshold current |
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