| ICP-PECVD法制备类金刚石膜 |
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| 引用本文： | 孙丽,白杰,朱立强,刘东平.ICP-PECVD法制备类金刚石膜[J].大连铁道学院学报,2009(2):14-17. |
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| 作者姓名： | 孙丽 白杰 朱立强 刘东平 |
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| 作者单位： | 大连交通大学机械工程学院;大连民族学院光电子技术研究所; |
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| 摘 要： | 以CH4为放电气体，利用电感耦合等离子体化学气相沉积（ICP—PECVD）法制备了类金刚石薄膜，使用FTIR、AFM、台阶仪对薄膜进行了表征，并对薄膜的沉积过程进行了光谱诊断（OES）．研究了射频功率和基底在放电腔体中的位置对薄膜表面粗糙度、沉积速率和硬度的影响．实验结果表明：A位置处薄膜粗糙度随着功率的增加先减小后增大，随着射频功率的升高，薄膜的硬度逐渐增大，沉积速率先增大后减小，而薄膜硬度和沉积速率都随着与线圈中心距离的增加而减小．光谱诊断结果显示，随着功率的升高，Iβ/Iα和CH的强度呈增大趋势．结合上述研究结果，分析了影响薄膜生长的多种因素．
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| 关 键 词： | ICP-PECVD 类金刚石膜 粗糙度 沉积速率 光谱诊断 |
Study of Diamond-Like Carbon Films by ICP-PECVD |
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| SUN Li,BAI Jie,ZHU Li-qiang,LIU Dong-ping.Study of Diamond-Like Carbon Films by ICP-PECVD[J].Journal of Dalian Railway Institute,2009(2):14-17. |
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| Authors: | SUN Li BAI Jie ZHU Li-qiang LIU Dong-ping |
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| Institution: | SUN Li1,BAI Jie1,ZHU Li-qiang1,2,LIU Dong-ping2(1.School of Mechanical Engineering,Dalian Jiaotong University,Dalian 116028,China,2.Institute of Optoelectronic Technology,Dalian Nationalities University,Dalian 116600,China) |
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| Abstract: | Diamond-like carbon films are prepared using methane(CH4) inductive coupled plasma enhanced chemical vapor deposition(ICP-PECVD).The films are analyzed using fourier transform infrared spectroscopy(FTIR),atomic force microcopy(AFM) and Miriam steps.ICP-PECVD plasmas during film deposition are characterized in-situ by means of optical emission spectrometry(OES).The influences of discharge power and substrate distance from the coil region on film properties such as surface roughness,deposition rates,and hardn... |
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| Keywords: | ICP-PECVD diamond-like carbon films roughness deposition rate OES measurements |
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