| FABRICATION AND CHARACTERATION OF NANOPOROUS SILICA FILM |
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| 作者姓名： | 殷明志 张良莹 姚熹 |
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| 作者单位： | Electronic Materials Research Laboratory，Xi'an Jiaotong University，Xi'an 710049，China，Electronic Materials Research Laboratory，Xi'an Jiaotong University，Xi'an 710049，China，Electronic Materials Research Laboratory，Xi'an Jiaotong University，Xi'an 710049，China |
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| 基金项目： | ThisworkwassupportedbytheNational973ProjectofChina(No.2002CB613305).ElectronicmaterialinstituteofXianJiaotongUniversity. |
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| 摘 要： | Microporoussilicafilmswithspecialpropertiesareexpectedtobeusedinmanyfields,suchasopticalcoat ing1 ] ,sensor,membrance2 ] ,anddielectricfilm3 ] .Itslowsoundspeedandacousticdelayorhigherratiosoundinsulatingmaybeusedasultrasounddetector4] .Theexcellentfeaturesofinsulatingpropertyanditsnearper fectinterfaceonsiliconcouldplayakeyroleinsuccessofverylargescaleintegrated(VLSI)devices5\〗,etc.Intheotheraspects,nanoporoussilicafilmsarebeingusedinseparationtechnology6] ,molecularengineering,andbi…
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FABRICATION AND CHARACTERATION OF NANOPOROUS SILICA FILM |
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| Yin Mingzhi,Zhang Liangying,Yao Xi Electronic Materials Research Laboratory,Xi'an Jiaotong University,Xi'an ,China..FABRICATION AND CHARACTERATION OF NANOPOROUS SILICA FILM[J].Academic Journal of Xi’an Jiaotong University,2003,15(2). |
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| Authors: | Yin Mingzhi Zhang Liangying Yao Xi Electronic Materials Research Laboratory Xi'an Jiaotong University Xi'an China |
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| Institution: | Electronic Materials Research Laboratory, Xi'an Jiaotong University,Xi'an 710049, China |
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| Abstract: | Colloidal silica sol is formed by a novel hydrolyzing procedure of tetraethyl-orthosilicate(TEOS) catalyzing with NH3*H2O in aqueous mediums. Glycerol, combining with the hydrolyzed intermediates of TEOS, controls growing of the silica particles; poly(vinyl-vinyl alcohol makes the colloidal silica sol with polymeric structure and spinning, thermal strain makes the gel silica film changed into a nanoporous structure with diameter ranging 50-150 nm. Morphologies of the nanoporous silica film have been characterized; the porosities (%) is 32-64; the average dielectric constant at 1MHz region is 2.0 and 2.1; the thermal conductivity is less than 0.8. Chemical mechanism of the sol-gel process is discussed. |
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| Keywords: | tetraethylorthosilicate sol gel technique nanoporous silica film thermal conductivity |
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