| Nc-Si Thin Film Deposited at Low Temperature and Nc-Si Heterojunction Solar Cel |
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| 作者姓名： | 赵占霞 崔容强 孟凡英 于化丛 周之斌 |
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| 作者单位： | Dept. of Physics，Solar Energy Inst.，Shanghai Jiaotong Univ.，Shanghai 200240，China，Dept. of Physics，Solar Energy Inst.，Shanghai Jiaotong Univ.，Shanghai 200240，China，Dept. of Physics，Solar Energy Inst.，Shanghai Jiaotong Univ.，Shanghai 200240，China，Dept. of Physics，Solar Energy Inst.，Shanghai Jiaotong Univ.，Shanghai 200240，China，Dept. of Physics，Solar Energy Inst.，Shanghai Jiaotong Univ.，Shanghai 200240，China |
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| 基金项目： | TheNano-siliconFilmSolarCellofShanghaiScience&TechnologyCommittee(No.0216nm103) |
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| 摘 要： | IntroductionMuchworkhasbeendonetostudythestruc-tureandpropertiesofthehydrogenatednano-crystallinesilicon(nc-Si∶H)thinfilmsinthepastfewyears1～3].Ithasbeenreportedthatthesefilmshavemanygoodopticalandelectricalproper-ties4～6].Severaldepositiontechniqueshavebeenestablishedtopreparenc-Si∶Hthinfilms,includ-ingplasmaenhancedchemicalvapordeposition(PECVD),hotwirechemicalvapordeposition(HWCVD)7,8]andreactivemagnetronsputter-ing9]withthesubstratetemperaturevaryingfrom150to250°C.Comparedwi…
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Nc-Si Thin Film Deposited at Low Temperature and Nc-Si Heterojunction Solar Cell |
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| ZHAO Zhan-xia,CUI Rong-qiang,MENG Fan-ying,YU Hua-cong,ZHOU Zhi-bin.Nc-Si Thin Film Deposited at Low Temperature and Nc-Si Heterojunction Solar Cel[J].Journal of Shanghai Jiaotong university,2004,9(4). |
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| Authors: | ZHAO Zhan-xia CUI Rong-qiang MENG Fan-ying YU Hua-cong ZHOU Zhi-bin |
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| Institution: | Dept. of Physics, Solar Energy Inst., Shanghai Jiaotong Univ., Shanghai 200240, China |
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| Abstract: | This paper reported some results about intrinsic nanocrystalline silicon thin films deposited by high frequency (HF) sputtering on p-type c-Si substrates at low temperature. Samples were examined by atomic force microscopy (AFM), X-ray diffraction (XRD), infrared absorption, and ellipsometry. XRD measurements show that this film has a new microstructure, which is different from the films deposited by other methods. The ellipsometry result gives that the optical band gap of the film is about 2.63 eV. In addition, the n-type nc-Si ∶ H/p-type c-Si heterojunction solar cell, which has open circuit voltage (Uoc) of 558 mV and short circuit current intensity (Isc) of 29 mA/cm2, was obtained based on the nanocrystalline silicon thin film. Irradiated under AM1.5, 100 mW/cm2 light intensity, the Uoc, Isc, and FF can keep stable for 10 h. |
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| Keywords: | HF sputtering low temperature nanocrystalline silicon heterojunction solar cell |
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