| N掺杂的ZnO薄膜发光性质研究 |
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| 引用本文： | 胡永金,吴云沛,刘国营,史秋月,罗时军. N掺杂的ZnO薄膜发光性质研究[J]. 湖北汽车工业学院学报, 2011, 25(4): 52-55 |
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| 作者姓名： | 胡永金 吴云沛 刘国营 史秋月 罗时军 |
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| 作者单位： | 1. 湖北汽车工业学院理学系,湖北十堰,442002
2. 湖北汽车工业学院材料工程系,湖北十堰,442002 |
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| 基金项目： | 国家自然科学基金，湖北省优秀中青年科技创新团队资助项目 |
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| 摘 要： | 以醋酸锌为前驱体、醋酸铵为掺杂源,采用溶胶—凝胶法制备出N掺杂的ZnO薄膜,研究了其表面形貌、晶体结构和变温下的光致发光光谱,探讨了N作为受主掺杂的热力学性质。结果表明,掺杂后的薄膜是六角纤锌矿结构,光谱中表现出和N相关的受主束缚激子、自由激子—受主和施主—受主对发光现象。通过理论计算得到,N作为受主的电离能大小为0.255~0.310 eV,表明N是一种有效的浅受主,其能级上的电子在较小的能量下就能够电离。
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| 关 键 词： | 溶胶—凝胶法 N掺杂 光致发光 受主 电离能 |
Investigation of Luminescence Properties in N-doped Thin Film |
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| Hu Yongjin,Wu Yunpei,Liu Guoying,Shi Qiuyue,Luo Shijun. Investigation of Luminescence Properties in N-doped Thin Film[J]. Journal of Hubei Automotive Industries Institute, 2011, 25(4): 52-55 |
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| Authors: | Hu Yongjin Wu Yunpei Liu Guoying Shi Qiuyue Luo Shijun |
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| Affiliation: | 1(1.Department of Science,Hubei Automotive Industries Institute,Shiyan 442002,China; 2.Dept.of Material Engineering,Hubei Automotive Industries Institute,Shiyan 442002,China) |
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| Abstract: | N-doped ZnO thin film was prepared by using sol-gel method,in which zinc acetate and ammonium acetate were used as precursor and dopant source,respectively.The surface morphology,crystal structure and variable-temperature photoluminescence(PL) spectra were studied.The thermodynamics properties of N acceptor were discussed.The results show that the N-doped ZnO thin film is of hexagonal wurtzite structure.The N-related acceptor bound exciton,free exciton-acceptor and donor-acceptor pair emissions are observed in PL spectra.The ionization energy of N acceptor obtained by theoretical calculation is 0.255~0.310 eV,which demonstrates that N is an effective shallow acceptor and the electrons in the level can be ionized under smaller energy. |
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| Keywords: | sol-gel method N-doped photoluminescence acceptor ionization energy |
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