| 具有先进保护功能的新型IGBT门极驱动器集成电路 |
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| 引用本文： | 杨进峰.具有先进保护功能的新型IGBT门极驱动器集成电路[J].变流技术与电力牵引,2006(5):26-30,39. |
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| 作者姓名： | 杨进峰 |
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| 摘 要： | 论述了IGBT门极驱动器设计新方案,它具有先进的保护功能,如元件采用双电平开通以减小峰值电流,采用双电平关断以限制过电压,以及防止出现桥臂贯通的有源密勒箝位.此外还介绍一种包括双电平关断驱动器和有源密勒箝位功能的新电路,并对所述功能的试验及结果进行阐述,重点介绍双电平关断驱动器的中间电平对IGBT过电压的影响.
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| 关 键 词： | 有源密勒箝位 双极型CMOS DMOS(BCD) 桥臂贯通 绝缘栅双极型晶体管(IGBT) 过冲 峰值电流 双电平驱动器 保护功能 IGBT 驱动器 集成电路 Advanced Devices Integrated Circuit Driver 影响 重点 阐述 结果 试验 箝位 过电压 峰值电流 电平 元件 方案 设计 |
| 文章编号： | 1671-8410（2006）05-0026-05 |
A New Gate Driver Integrated Circuit for IGBT Devices with Advanced Protections |
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| L.Dulau.A New Gate Driver Integrated Circuit for IGBT Devices with Advanced Protections[J].Converter Technology & Electric Traction,2006(5):26-30,39. |
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| Authors: | LDulau |
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| Abstract: | The aim of this paper is to discuss new solutions in the design of insulated gate bipolar transistor (IGBT) gate drivers with advanced protections such as two-level turn-on to reduce peak current when turning on the device, two-level turn-off to limit over-voltage when the device is turned off, and an active Miller clamp function that acts against cross conduction phenomena. Afterwards, we describe a new circuit which includes a two-level turn-off driver and an active Miller clamp function. Tests and results for these advanced functions are discussed, with particular emphasis on the influence of an intermediate level in a two-level turn-off driver on overshoot across the IGBT. |
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| Keywords: | active Miller clamp bipolar CMOS DMOS(BCD) cross conduction insulated gate bipolar transistor(IGBT) overshoot peak current two-level driver |
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