Nc-Si Thin Film Deposited at Low Temperature and Nc-Si Heterojunction Solar Cell |
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作者姓名: | 赵占霞 崔容强 孟凡英 于化丛 周之斌 |
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作者单位: | Dept.ofPhysics,SolarEnergyInst.,ShanghaiJiaotongUniv.,Shanghai200240,China |
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摘 要: | This paper reported some results about intrinsic nanocrystalline silicon thin films deposited by high frequency (HF) sputtering on p-type c-Si substrates at low temperature. Samples were examined by atomic force microscopy (AFM), X-ray diffraction (XRD), infrared absorption, and ellipsometry. XRD measurements show that this film has a new microstructure, which is different from the films deposited by other methods. The ellipsometry result gives that the optical band gap of the film is about 2.63 eV. In addition, the n-type nc-Si :H/p-type c-Si heterojunction solar cell, which has open circuit voltage (Uoc) of 558 mV and short circuit current intensity (Isc) of 29 mA/cm^2, was obtained based on the nanocrystalline silicon thin film. Irradiated under AM1.5, 100 mW/cm^2 light intensity, the Uoc, Isc, and FF can keep stable for 10 h.
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关 键 词: | HF喷涂 低温 纳米结晶硅 异质结太阳电池 薄膜 |
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