Effect of LaNiO3 interlayer on the dielectric properties of Ba0.5Sr0.5TiO3 thin film on Si substrate |
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| Authors: | Cong-chun Zhang Chun-sheng Yang Jin-chuan Shi Rui Rao |
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| Institution: | (1) Institute of Micro and Nano Science and Technology, Shanghai Jiaotong University, Shanghai, 200240, China;(2) GESEC R&D Inc., 140 rue du Lourmel, 75015 Paris, France |
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| Abstract: | In this study, (100)-oriented growth of Ba0.5Sr0.5TiO3 (BST) /LaNiO3 (LNO) stacks was obtained on Pt(111)/SiO2/Si substrates by r.f. magnetron sputtering. The orientation of the subsequently deposited Ba0.5Sr0.5TiO3 thin film was strongly affected by the LNO under layer, and the BST thin film deposited on the (100)LNO-coated Si substrate
was also found to have a significant (100)-oriented texture. Effects of LNO interlayer on the dielectric properties of BST
thin films were investigated. As a result, the tunability of BST thin film was greatly improved with the insertion of (100)-oriented
LNO under layer with proper thickness.
Foundation item: the National Key Lab of Nano/Micro Fabrication Technology (No. 9140C 790310060C79) and the National Natural Science Foundation
of China (No. 60701012) |
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| Keywords: | magnetron sputtering thin films orientation buffer layer dielectric properties |
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