Sol-Gel提拉法制备ZAO薄膜及其光电性能

采用溶胶-凝胶（Sol-Gel）浸渍提拉法（基于组装的小型提拉装置）在普通玻璃片上制备出ZnO：Al（ZAO）薄膜，利用扫描电子显微镜、紫外-可见分光光度计、数字式四探针测试仪等检测手段分别对其进行了分析比较。结果表明：Al^3＋浓度为1．0％的ZAO薄膜表面最为致密均匀；随着退火温度的提高，薄膜的晶体平均粒径明显增大，电阻率逐渐减小；不同掺Al量的ZAO薄膜在可见光区的平均透光率均在70％以上，当Al^3＋浓度为1．5％时，550℃退火2h，电阻率最小，为5．9×10^-2Ω·cm。

Preparation and Properties of Sol-Gel ZAO Thin Films

ZnO:Al(ZAO) thin films were respectively prepared on glass substrates by Sol-Gel dip-coating method by an assembled diminutive device,scanning electron microscopy(SEM),UV-visible spectrophotometry(UV-vis),digital four-point probe electrical resistance measurement were used to characterize their surface morphologies,transmission property,film thickness,electrical resistance etc.The results indicate that the morphology of the ZAO thin films are more compact when Al3+ doping concentration is 1%;with increasing...