非对称双异质结中极化子性质的研究

研究了半导体非对称双异质结（ＡＤＨＳ）中，极化子的基态性质。计算出基束缚能和有效质量，并表示为阱宽的函数。计算中既考虑受限ＬＯ声子的贡献，也考虑界面声子的贡献，其结果与对称双异质结（ＤＨＳ）的结果有较大差别，界面声子起了更大的作用。显示结构的非对称性会对双异质结的性质带来深刻的影响。

Study on Polaron Properties in Asymmetric Double Heterostructure of Semiconductors

The polaron ground state in asymmetric double heterostructure (ADHS) is studied. Using perturbation method, the binding energy and effective mass of a polaron are calculated and expressed as the functions of the width of the center layer. In considering electronphonon interactions, both the confined longitudinal optical modes and the interface phonon modes are included. The results differ largely from what is in symmetric double heterostructure (DHS), for the contribution of the interface phonons is larger and wider than in DHS, showing that the asymmetry in structure has a profound effect on the properties of ADHS.