Co—Pt—Fe磁光薄膜微观结构

用蒸发沉积法制备了Ｃｏ－Ｐｔ－Ｆｅ多层膜，对薄膜进行真空扩散处理后，再利用透射电镜观察膜微观组织形态并利用微区衍射技术分析物相结构。结果表明，经退火处理的薄膜组织呈多晶态，晶粒非常细小，最大未超过４００ｎｍ，同时发现存在层错或孪晶等结构缺陷，但未发现有位错等线缺陷。     

电弧喷涂制膜涂层的显微组织结构和硬度分析

利用ＳＥＭ，ＸＲＤ，ＥＤＸ等手段，分析了Ａｌ，Ｚｎ，Ａｌ－Ｚｎ伪合金和Ａｌ－Ｚｎ合金四种电作层的显微组织结构和显生硬度。结果表明，Ａｌ－Ｚｎ伪合金涂层为Ａｌ，Ｚｎ两相的机械混合物，其涂层组织较致密，Ａｌ－Ｚｎ伪合金涂层的显微硬度接近Ａｌ涂层的硬度，是一种具有较好的综合性能和制备简单的电弧喷涂制模涂层。     

电弧喷涂制模涂层的显微组织结构和硬度分析

利用ＳＥＭ、ＸＲＤ、ＥＤＸ等手段，分析了Ａｌ、Ｚｎ、Ａｌ－Ｚｎ伪合金和Ａｌ－Ｚｎ合金四种电弧喷涂层的显微组织结构和显微硬度。结果表明：Ａｌ－Ｚｎ伪合金涂层为Ａｌ、Ｚｎ两相的机械混合物，其涂层组织较致密，Ａｌ－Ｚｎ伪合金涂层的显微硬度接近Ａｌ涂层的硬度，是一种具有较好的综合性能和制备简单的电弧喷涂制模涂层。     

低温球磨制备块体纳米Al晶体材料的组织与性能

采用低温球磨结合真空热压烧结技术制备了块体纳米Al晶体材料，并加入硬质Al2O3颗粒来进一步提高该材料的强度和硬度．利用X射线衍射，透射电镜对材料的微观组织进行了分析和观察，并对所制备块体纳米材料的密度、显微硬度和拉伸性能进行了测定．研究结果表明：当球磨时间从8h增加到14h时，纳米Al粉末颗粒的晶粒尺寸从55nm减小到43nm，微观应变从0．0272％增至0．0759％．经致密化处理后，该材料的晶粒尺寸从115nm减小到71nm．经热挤压后的块体纳米Al及Al—Al2O3晶体材料的相对密度都达99．4％以上，其最高显微维氏硬度分别为1．02和1．22GPa，比粗晶Al的显微维氏硬度分别提高了3和3．6倍．块体纳米Al的最高屈服强度和抗拉强度分别为165和243MPa，比粗晶1050纯Al的屈服强度和抗拉强度分别提高了7．5和3．2倍．当平均晶粒尺寸小于223nm时，得到块体纳米Al材料的屈服强度与晶粒尺寸之间的关系为σ=71．8＋1．8D^-1/2．     

W-Mo梯度飞片的显微组织特征研究

利用电子探讨和扫描电镜对W－Mo梯度飞片的化学元素分布，显微组织和断口形貌进行了研究。结果表明：W－Mo梯度材料整体致密，成分分布呈梯度变化特征；富钨区，富钼区主要表现为脆性断裂，界面处具有明显的韧性断裂特征。     

深冷球磨及真空热压制备块体Al及Al-Al2O3纳米晶体材料

利用深冷球磨及真空热压技术制备块体Al及Al-Al2O3纳米晶体材料,采用X射线衍射测定晶粒尺寸,利用扫描电镜对材料的微观组织进行观察,并测定了所制备材料的显微硬度和抗拉性能.研究结果表明:经深冷球磨14 h后,Al粉末颗粒的平均晶粒尺寸由50 μm变化到43 nm.块体纳米Al晶体材料的显微硬度随烧结温度升高而下降,加入纳米Al2O3颗粒后显微硬度约为粗晶纯Al显微硬度的4倍;块体纳米Al晶体材料的抗拉强度极限σb为265 MPa,加入纳米Al2O3颗粒后的抗拉强度为322 MPa,比纳米纯Al晶体材料提高了22%.     

深冷球磨及真空热压制备块体Al及Al-Al_2O_3纳米晶体材料

利用深冷球磨及真空热压技术制备块体Al及Al-Al2O3纳米晶体材料,采用X射线衍射测定晶粒尺寸,利用扫描电镜对材料的微观组织进行观察,并测定了所制备材料的显微硬度和抗拉性能.研究结果表明:经深冷球磨14 h后,Al粉末颗粒的平均晶粒尺寸由50μm变化到43 nm.块体纳米Al晶体材料的显微硬度随烧结温度升高而下降,加入纳米Al2O3颗粒后显微硬度约为粗晶纯Al显微硬度的4倍;块体纳米Al晶体材料的抗拉强度极限σb为265 MPa,加入纳米Al2O3颗粒后的抗拉强度为322 MPa,比纳米纯Al晶体材料提高了22%.     

铜-氮化硅复合电沉积过程的交流阻抗测试分析

通过交流阻抗测试法研究了Ｃｕ－Ｓｉ３Ｎ４复合电沉积过程Ｓｉ３Ｎ４微粒对阴极电化学行为的影响，结果表明：Ｓｉ３Ｎ４粒子在电极表面存在吸附，阴极极化增加，吸附增强；吸附粒子阻碍金属离子阴极放电沉积。     

铜—氧化硅复合由沉积过程的交流阻抗测试分析

通过交流阻抗测试法研究了Ｃｕ－Ｓｉ３Ｎ４复合电沉积过程Ｓｉ３Ｎ４微粒对阴极电化学行为的影响。结果表明：Ｓｉ３Ｎ５粒子在电极表面存在吸附，阴极极化增加，吸附增强；吸附粒子阻碍金属离子阴极放电沉积。     

低温球磨制备块体纳米Al晶体材料的组织与性能

采用低温球磨结合真空热压烧结技术制备了块体纳米Al晶体材料,并加入硬质Al2O3颗粒来进一步提高该材料的强度和硬度．利用X射线衍射,透射电镜对材料的微观组织进行了分析和观察,并对所制备块体纳米材料的密度、显微硬度和拉伸性能进行了测定．研究结果表明：当球磨时间从8h增加到14h时,纳米Al粉末颗粒的晶粒尺寸从55nm减小到43nm,微观应变从0．0272％增至0．0759％．经致密化处理后,该材料的晶粒尺寸从115nm减小到71nm．经热挤压后的块体纳米Al及Al—Al2O3晶体材料的相对密度都达99．4％以上,其最高显微维氏硬度分别为1．02和1．22GPa,比粗晶Al的显微维氏硬度分别提高了3和3．6倍．块体纳米Al的最高屈服强度和抗拉强度分别为165和243MPa,比粗晶1050纯Al的屈服强度和抗拉强度分别提高了7．5和3．2倍．当平均晶粒尺寸小于223nm时,得到块体纳米Al材料的屈服强度与晶粒尺寸之间的关系为σ=71．8＋1．8D^-1/2．     

Ce掺杂的WO_3薄膜的电学性质

在磁控溅射仪上用直流Ce和W共同磁控溅射方法,在载玻片上沉积Ce掺杂的WO_3,薄膜,以研究溅射功率对该薄膜电学性质的影响.薄膜在550℃的空气中退火1 h,用X射线衍射和扫描电子显微镜分析薄膜的显微结构.结果表明:Ce掺杂后薄膜呈岛状结构生长,有利于薄膜沿b轴方向生长;当Ce和W的溅射功率分别为40 W和160 W时,薄膜的非线性系数最大,达到7.92.     

有机衬底上射频磁控溅射制备ITO薄膜的研究

Introduction Indium tin oxide (ITO) film has been widely used as a transparent conductor due to its high transparency to visible light and its low electrical resistivity. ITO film can be prepared by many techniques, including thermal evaporation deposition, magnetron sputtering, electron beam evaporation, spray pyrolysis,chemical vapour deposition,dip-coating techniques,and later developed pulsed laser deposition method.     

Effect of LaNiO3 Interlayer on the Dielectric Properties of Ba0.5Sr0.5TiO3 Thin Film on Si Substrate

In this study, (100)-oriented growth of Ba0.5Sr0.5TiO3 (BST) /LaNiO3 (LNO) stacks was obtained on Pt(lll)/SiO2/Si substrates by r.f. magnetron sputtering. The orientation of the subsequently deposited Ba0.5Sr0.5TiO3 thin film was strongly affected by the LNO under layer, and the BST thin film deposited on the (100)LNO-coated Si substrate was also found to have a significant (100)-oriented texture. Effects of LNO interlayer on the dielectric properties of BST thin films were investigated. As a result, the tunability of BST thin film was greatly improved with the insertion of (100)-oriented LNO under layer with proper thickness.     

The Adhesion Improvement of Cubic Boron Nitride Film on High Speed Steel Substrate Implanted by Boron Element

Cubic boron nitride（c-BN） films were deposited on W6Mo5Cr4V2 high speed steel（HSS） substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by the bending beam method, scratch test, XPS and AFM. The experimental results show that the implantation of boron atom can reduce the internal stress and improve the adhesion strength of the films. The critical load of scratch test rises to 27.45 N, compared to 1.75 N of c-BN film on the unimplanted HSS. The AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. Then the composition of the boron implanted layer was analyzed by the XPS. And the influence of the boron implanted layer on the internal stress and adhesion strength of c-BN films were investigated.     

Nc-Si Thin Film Deposited at Low Temperature and Nc-Si Heterojunction Solar Cel

IntroductionMuchworkhasbeendonetostudythestruc-tureandpropertiesofthehydrogenatednano-crystallinesilicon(nc-Si∶H)thinfilmsinthepastfewyears[1～3].Ithasbeenreportedthatthesefilmshavemanygoodopticalandelectricalproper-ties[4～6].Severaldepositiontechniqueshavebeenestablishedtopreparenc-Si∶Hthinfilms,includ-ingplasmaenhancedchemicalvapordeposition(PECVD),hotwirechemicalvapordeposition(HWCVD)[7,8]andreactivemagnetronsputter-ing[9]withthesubstratetemperaturevaryingfrom150to250°C.Comparedwi…     

Effect of LaNiO3 interlayer on the dielectric properties of Ba0.5Sr0.5TiO3 thin film on Si substrate

In this study, (100)-oriented growth of Ba_0.5Sr_0.5TiO₃ (BST) /LaNiO₃ (LNO) stacks was obtained on Pt(111)/SiO₂/Si substrates by r.f. magnetron sputtering. The orientation of the subsequently deposited Ba_0.5Sr_0.5TiO₃ thin film was strongly affected by the LNO under layer, and the BST thin film deposited on the (100)LNO-coated Si substrate was also found to have a significant (100)-oriented texture. Effects of LNO interlayer on the dielectric properties of BST thin films were investigated. As a result, the tunability of BST thin film was greatly improved with the insertion of (100)-oriented LNO under layer with proper thickness. Foundation item: the National Key Lab of Nano/Micro Fabrication Technology (No. 9140C 790310060C79) and the National Natural Science Foundation of China (No. 60701012)     

直流脉冲磁控溅射制备ITO薄膜及其光电性能

利用直流脉冲磁控溅射法在室温下制备ITO薄膜.通过台阶仪、紫外-可见分光光度计、四探针仪等表征技术,研究了沉积气压、溅射功率,以及Ar/O2流量比等对ITO薄膜沉积速率、光学性能,以及电学性能的影响.研究结果表明,薄膜沉积速率随沉积气压的增大而减小,随功率的增大而增大;方块电阻随气压的增大而增大,随功率的增大而减小;可见光平均透过率主要受O2流量的影响.在沉积气压为0.5 Pa,Ar/O2流量比为20∶0,溅射功率为250 W,膜厚为200 nm时,薄膜的方块电阻为27Ω/□,可见光平均透过率为84.1%.     

Effect of oxygen content on structural and optical properties of single Cu2O film by reactive magnetron sputtering method

Cuprous oxide (Cu₂O) thin films have been deposited on glass substrate by reactive magnetron sputtering method using Cu target and argon oxygen gas atmosphere. Effect of oxygen flow rate on structural and optical properties of thin films has been discussed. The results of X-ray diffraction, ultraviolet-visible spectrophotometry and atomic force micrograph indicated that the condition window for single Cu₂O phase was about 3.8 to 4.4 cm³/min, and the optimum oxygen flow rate was 4.2 cm³/min. The optical band gap E _g of Cu₂O film was determined by using the data of transmittance versus wavelength, and slightly decreased from 2.46 to 2.40 eV with the increase of oxygen flow rate from 3.8 to 4.4 cm³/min. The Cu₂O film formed at the oxygen flow rate of 4.2 cm³/min had an optical band gap of 2.43 eV.     

人性在信仰与现实中升华

《少年派的奇幻漂流》是一部关于少年派在海上漂流生存的富有传奇色彩而隐藏深意的影片。这部电影的叙述风格和艺术效果与美国作家福克纳的短篇小说《纪念爱米丽的一朵玫瑰花》十分相似,都是直到最后一刻才从作者精心构造的迷宫里走了出来,真相恍然大悟,却又意犹未尽。该影片不仅仅为我们展现了梦幻的视觉效果,而且对文本本身表现出如梦般的精神内涵。从精神分析理论透过弗洛伊德等人对梦的形成及与现实的关系等层面看,影片实质上表达了一场信仰与现实的对抗。     

非支配排序遗传算法的动压轴承形状多目标优化

为了克服以偏心率为初始参数的轴承优化模型优化结果局限于原始形状的缺点,提出用傅里叶级数表示通用膜厚方程,建立了多目标形状优化设计数学模型.应用基于非支配排序遗传算法,以最小功耗和最小侧漏流速为目标、最小油膜厚度和最小承载力为限制条件,以通用膜厚方程系数为设计变量,进行了轴承形状的多目标优化设计,并用Matlab偏微分方程工具箱求解基于通用膜厚的控制方程.实例分析结果表明:基于通用膜厚方程的多目标优化后的轴承形状不受固有型线的限制;在保证最大承载力的基础上,优化后的非圆轴承与仅以最大承载力为单目标优化的结果相比,最小功耗下降了80.8%,最小侧漏流速比优化前下降了3个数量级,并得出了Pareto最优解集.