ICP-PECVD法制备类金刚石膜

以CH4为放电气体,利用电感耦合等离子体化学气相沉积(ICP-PECVD)法制备了类金刚石薄膜,使用.FTIR、AFM、台阶仪对薄膜进行r表征,并对薄膜的沉积过程进行了光谱诊断(OES).研究了射频功率和基底在放电腔体中的佗置对薄膜表面粗糙度、沉积速率和硬度的影响.实验结果表明:A位置处薄膜粗糙度随着功率的增加先减小后增大,随着射频功率的升高,薄膜的硬度逐渐增大,沉积速率先增大后减小,而薄膜硬度和沉积速率都随着与线圈中心距离的增加而减小.光谱诊断结果显示,随着功率的升高,Iβ/Iα和CH的强度呈增大趋势.结合上述研究结果,分析了影响薄膜生长的多种因素.     

La0.7Sr0.3MnO3单晶外延薄膜制备及其磁电阻特性

为制得性能良好的涂层导体用La0.7Sr0.3MnO3(LSMO)缓冲层薄膜、研究LSMO薄膜的低磁场磁电阻效应,利用高分子辅助化学溶液沉积法,在LaAlO3(LAO)单晶基底上制备了一系列钙钛矿LSMO单晶外延薄膜.考虑氩气和氧气退火气氛对LSMO成相的影响,研究了氩气退火条件下样品的织构、形貌情况和氧气退火条件下制得的样品的输运性质及磁电阻效应.研究结果表明:氩气下采用高分子辅助的化学溶液沉积法有利于制备出低成本、高性能的涂层导体用单一LSMO缓冲层;氧气下退火制得的薄膜c轴取向生长良好,并且电阻-温度曲线出现绝缘体-金属相变,其磁电阻值在200~300 K范围内不随温度变化,在1 T磁场室温下磁电阻值约为-26.0 %.      

高效率制备超导涂层导体SmBiO_3缓冲层

为了缩短高温超导涂层导体缓冲层薄膜制备周期,采用自开发的前驱溶液,以乳酸为溶剂,硝酸钐和硝酸铋为溶质,在应由表面氧化外延法所得的衬底(NiO(l00)/NiW)上,用化学溶液沉积快速制备了SmBiO_3缓冲层薄膜,研究成相温度对SmBiO_3薄膜的影响;在SmBiO_3薄膜上沉积YBa_2Cu_3O_7-δ超导层,检验其效用.研究结果表明:在798.5℃下制备的SmBiO_3缓冲层薄膜平整致密,并且高度织构,缓冲层薄膜制备周期缩短到2h以内;在SmBiO_3上所沉积的超导层薄膜超导转变温度为89K,超导临界电流密度为1.46MA/cm2(77K、0T),达到了某些电力应用要求;该SmBiO_3薄膜制备方法可用于高温超导涂层导体的快速制备.     

退火温度对化学水浴沉积CdS薄膜性能的影响

采用化学水浴沉积法(CBD)制备了CdS薄膜,用扫描电镜(SEM)、能谱(EDS)、X射线衍射仪(XRD)、分光光度计进行检测.研究了退火温度对CdS薄膜表面形貌、成分、晶体结构和光学性能的影响.研究表明,CdS薄膜为微晶或是非晶态,S/Cd原子比在0.8左右,可见光透过率较高;随着退火温度的升高,薄膜结晶明显,但是透光率下降,禁带宽度范围在2.42～2.59eV之间.     

ICP-PECVD法制备类金刚石膜

以CH4为放电气体,利用电感耦合等离子体化学气相沉积（ICP—PECVD）法制备了类金刚石薄膜,使用FTIR、AFM、台阶仪对薄膜进行了表征,并对薄膜的沉积过程进行了光谱诊断（OES）．研究了射频功率和基底在放电腔体中的位置对薄膜表面粗糙度、沉积速率和硬度的影响．实验结果表明：A位置处薄膜粗糙度随着功率的增加先减小后增大,随着射频功率的升高,薄膜的硬度逐渐增大,沉积速率先增大后减小,而薄膜硬度和沉积速率都随着与线圈中心距离的增加而减小．光谱诊断结果显示,随着功率的升高,Iβ/Iα和CH的强度呈增大趋势．结合上述研究结果,分析了影响薄膜生长的多种因素．     

直流脉冲磁控溅射制备ITO薄膜及其光电性能

利用直流脉冲磁控溅射法在室温下制备ITO薄膜.通过台阶仪、紫外-可见分光光度计、四探针仪等表征技术,研究了沉积气压、溅射功率,以及Ar/O2流量比等对ITO薄膜沉积速率、光学性能,以及电学性能的影响.研究结果表明,薄膜沉积速率随沉积气压的增大而减小,随功率的增大而增大;方块电阻随气压的增大而增大,随功率的增大而减小;可见光平均透过率主要受O2流量的影响.在沉积气压为0.5Pa,Ar/O2 流量比为20:0,溅射功率为250W,膜厚为200nm时,薄膜的方块电阻为27Ω/□,可见光平均透过率为84.1%.     

直流脉冲磁控溅射制备ITO薄膜及其光电性能

利用直流脉冲磁控溅射法在室温下制备ITO薄膜.通过台阶仪、紫外-可见分光光度计、四探针仪等表征技术,研究了沉积气压、溅射功率,以及Ar/O2流量比等对ITO薄膜沉积速率、光学性能,以及电学性能的影响.研究结果表明,薄膜沉积速率随沉积气压的增大而减小,随功率的增大而增大;方块电阻随气压的增大而增大,随功率的增大而减小;可见光平均透过率主要受O2流量的影响.在沉积气压为0.5 Pa,Ar/O2流量比为20∶0,溅射功率为250 W,膜厚为200 nm时,薄膜的方块电阻为27Ω/□,可见光平均透过率为84.1%.     

氧化钛纳米管的制备及两步法修饰

用水热法合成氧化钛纳米管,再经两步法接枝Au纳米粒子,制备了氧化钛纳米管复合材料:先在氧化钛纳米管上沉积聚多巴胺薄膜,利用多巴胺的反应活性,接枝Au纳米粒子.借助场发射扫描电镜(FESEM)和透射电镜(TEM)观察修饰前后样品形貌,X射线衍射(XRD)和红外谱图(FTIR)分析样品组成,结果表明:水热法合成的H2Ti3O7氧化钛纳米管,管径100~300nm,Au纳米粒子为50~100nm.鉴于聚多巴胺薄膜的生物安全性且几乎能沉积在任何物质表面并且能与多个官能团发生反应的特性,两步修饰法简单、绿色,因而具有较好的适用性.     

影响CVD法形成VB2薄膜的因素

研究了反应气体的化学当量比、基板材料、基板温度对ＣＶＤ法形成ＶＢ２薄膜的影响。结果表明，化学当量经，绒板材料影响薄膜中ＶＢ２的含量，基板温度影响结晶粒子形态。     

二氧化钛膜光催化降解脱色甲基橙

用溶胶-凝胶法制备了不同载体、不同层数的锐钛矿纳米TiO2薄膜.利用TiO2薄膜作催化剂,光催化降解甲基橙溶液.研究了载体、光源、镀膜层数、pH值、初始浓度等对光催化降解脱色率的影响,从中获得了最佳镀膜及最佳光催化条件.结果表明:以太阳光为光源,以铝合金为载体,在500℃条件下镀3层膜,且在pH<8.00时光催化脱色效果最好;且该反应为表观一级反应,该光催化反应的极限速率常数为0.40 mg/(L.min),吸附平衡常数为2.65 L/mg;表面反应而非吸附是这个光催化反应的速度决定步骤,即该反应符合Langmuir-Hinshewood(L-H)机理.     

Simulation of temperature distribution in hot filament chemical vapor deposition diamond films growth on SiC seals

In this study, the temperature and gas velocity distributions in hot filament chemical vapor deposition(HFCVD) diamond film growth on the end surfaces of seals are simulated by the finite volume method. The influence of filament diameter, filament separation and rotational speed of the substrates is considered. Firstly,the simulation model is established by simplifying operating conditions to simulate the temperature and gas velocity distributions. Thereafter, the deposition parameters are optimized as 0.6 mm filament diameter, 18 mm filament separation and 5 r/min rotational speed to get the uniform temperature distribution. Under the influence of the rotational speed, the difference between temperature gradients along the directions perpendicular to the filament and parallel to the filament becomes narrow, it is consistent with the actual condition, and the maximum temperature difference on the substrates decreases to 7.4?C. Furthermore, the effect of the rotational speed on the gas velocity distribution is studied. Finally, diamond films are deposited on the end surfaces of Si C seals with the optimized deposition parameters. The characterizations by scanning electron microscopy(SEM) and Raman spectroscopy exhibit a layer of homogeneous diamond films with fine-faceted crystals and uniform thickness. The results validate the simulation model.     

Microwave hydrothermal synthesis and characterization of ZnO nanostructures in aqueous solution

ZnO nanostructures were prepared in aqueous solution by microwave hydrothermal synthesis. Xray diffraction (XRD) and field emission scanning electron microscopy (FESEM) were used to characterize ZnO nanostructures (ZNs). The effects of pH, reaction temperature and reaction time on yield of ZnO were investigated. The yield of ZnO increased significantly with the increase of pH value, reaction temperature and reaction time. High yield and well crystallinity of ZNs could be obtained at 120°C for 60min by microwave hydrothermal synthesis. The spherical and rugby-like ZNs were obtained at 120°C without triethanolamine (TEA) and with TEA (mass ratio, $r = m_{Zn^{2 + } }$ : m _TEA = 1: 1), respectively. The concentration of Zn(OH) ₄ ^?2 ions in the reaction solution and TEA had an important effect on the nucleation and morphology of ZnO nanostructures. Mechanism for the formation of ZnO nanostructures was proposed.     

镍—钼—磷／聚四氟乙烯复合电沉积工艺研究

在镍－钼－磷（Ni-Mo-P)合金电镀液中加入聚四氟乙烯（PTFE）制得了镍－钼－磷／聚四氟乙烯（Ni-Mo-P/PTFE)复合镀层。研究了镀液主要成份及工艺条件对复合镀层的影响，优选出一种较佳的工艺条件及复合镀液配方。由复合镀层性能测试结果发现，与Ni-Mo-P合金相比，由于PTFE的加入，提高了复合镀层的减摩性，但结合力与硬度略有下降。     

Friction and wear performances of hot filament chemical vapor deposition multilayer diamond films coated on silicon carbide under water lubrication

Tribological properties of chemical vapor deposition (CVD) diamond films greatly affect its application in the mechanical field. In this paper, a novel multilayer structure is proposed, with which multilayer diamond films are deposited on silicon carbide by hot filament CVD (HFCVD) method. The different micrometric diamond grains are produced by adjusting deposition parameters. The as-deposited multilayer diamond films are characterized by scanning electron microscope (SEM) and white-light interferometry. The friction tests performed on a reciprocating ball-on-plate tribometer suggest that silicon carbide presents the friction coefficient of 0.400 for dry sliding against silicon nitride (Si₃N₄) ceramic counterface. With the water lubrication, the corresponding friction coefficients of silicon carbide and as-deposited multilayer diamond films further reduce to 0.193 and 0.051, respectively. The worn surfaces indicate that multilayer diamond films exhibit considerably high wear resistance.     

纯铜表面镍硼合金涂层的制备

用化学沉积技术制备了Ni-B表面强化铜基材料，研究了表面涂层的显微组织、涂液的成分对镍硼沉积速率的影响及有关性能．结果表明，用化学沉积技术能在纯铜表面形成一层均匀、连续的镍硼硬化层，镍硼涂层的沉积速率由涂液中的NiCl2，KBH4，NaOH，稳定剂和H2NCH2CH2NH2的浓度控制，涂层是非晶态组织和少量过饱和镍固溶体的混合物，热处理后在涂层中析出Ni2B和Ni3B化合物，改善了铜的表面硬度和耐磨损性能，对铜的电阻率影响不大．     

离子束增强沉积TiN薄膜的耐蚀性

采用不同离子束入射方向的离子束增强沉积技术（IBED）在W18Cr4V高速钢表面沉积TiN薄膜.利用阳极极化曲线测试技术研究TiN薄膜在0.5mol/L H2SO4和3％ NaCl溶液中的耐蚀性.结果表明：在0.5mol/LH2SO4溶液中,离子束入射角度为45°时的TiN薄膜的阳极极化曲线呈现自钝化,自腐蚀电位Ecorr由原始高速钢的-400 mV增至-71 mV,致钝电流密度ib和维钝电流密度ip分别比原始试样降低4个和2个数量级,耐蚀性能显著提高.在3％ NaCl溶液中,离子束入射角度分别为0°、30°沉积的TiN薄膜的阳极极化曲线均呈现自钝化-点蚀击穿过程,随着入射角度的增加,自腐蚀电位和点蚀击穿电位升高,入射角度为45°时的TiN薄膜不发生点蚀破坏,自腐蚀电位Ecorr由原始高速钢的-600 mV增至-10 mV,具有高的抗点蚀性能.