酞菁铜薄膜制备及其光学性能

采用真空蒸发的方法在ITO玻璃上制备了CuPc 薄膜,并用分光光度计(U-3310)测试了四种不同厚度的CuPc薄膜的透射/吸收/反射率随波长变化情况,重点分析了其中的吸收规律.结果显示波段在340～370nm和570～720nm光吸收率基本上在90%左右,在480nm吸收率最低,大部分光都已透射.同时用扫描电子显微镜对薄膜进行了成分分析,对照能谱图可以看出样品中含有碳、氧、铜等元素,与酞菁铜薄膜元素组成成分相符.     

薄膜铝栅极有机半导体静电感应三极管的试制及动作特性

试制的有机静电感应三极管采用真空蒸镀法和有机色素酞菁铜(CuPc),制成Au/CuPc/Al/CuPc/Au五层结构,制作的薄膜铝栅极有机静电感应三极管,在偏置电压为V_(DS)=3V,V_(GS)=0V时,静态动作电流I_(DS)=1.2×10~(-6)A/mm~2,动态小信号响应频率可达到1000Hz。实验结果表明,与采用MOS结构的CuPc有机薄膜三极管相比,该三极管驱动电压低,呈典型的静电感应三极管不饱和电流-电压特性。     

薄膜铝栅极有机半导体静电感应三极管的试制及动作特性

试制的有机静电感应三极管采用真空蒸镀法和有机色素酞菁铜(CuPc),制成Au/CuPc/Al/CuPc/Au五层结构.制作的薄膜铝栅极有机静电感应三极管,在偏置电压为VDS=3V,VGS=0V时,静态动作电流IDS=1.2×10-6A/mm2,动态小信号响应频率可达到1 000Hz.实验结果表明,与采用MOS结构的CuPc有机薄膜三极管相比,该三极管驱动电压低,呈典型的静电感应三极管不饱和电流-电压特性.     

ZnO薄膜的溶胶—凝胶法制备及其光学性质研究

采用溶胶—凝胶法分别在透明玻璃和Si衬底上制备出了ZnO薄膜。分别采用X射线衍射仪(XRD)、能量分散谱仪(EDS)、紫外可见分光光度计和荧光光谱仪对所制样品进行测试,研究了样品的结构特性、成分和光学特性。X射线衍射结果表明,所制备的ZnO薄膜为六角纤锌矿结构;ZnO薄膜的EDS能谱图表明薄膜包含O元素和Zn元素;透射光谱表明ZnO薄膜质量高,在可见光范围内具有较高的透射率,平均透射率在85%以上;吸收光谱表明在带隙处存在吸收边;从PL光谱观察到了显著的紫外发射峰。     

Mg掺杂的ZnO薄膜的带隙宽化

用溶胶-凝胶法分别在硅片和玻璃衬底上生长出了纯的和Mg掺杂的ZnO薄膜。通过对Mg掺杂的ZnO薄膜进行元素成分分析,证明Mg元素成功地掺入到ZnO晶格中。通过透射光谱,得到了其带隙能量,且大小随着掺杂浓度的增加而线性增大。在同样掺杂浓度下,从光致发光光谱得到的带隙能量略大于通过透射光谱计算的结果,但是两者的增长率非常接近。     

SiNx薄膜的光致发光研究

用射频磁控溅射技术制备了氮化硅薄膜,室温下测试了薄膜的光致发光谱(PL)和光致发光激发谱(PLE),对薄膜材料的发光特性进行了分析.结果表明,在可见光范围内薄膜有很好的光致发光性质.在波长为381 nm的光激发下,SiNx薄膜的主要发光峰位于520 nm(2.38 eV), 553 nm(2.24 eV), 573 nm(2.16 eV),587 nm(2.11 eV)和627 nm(1.98 eV),主要来自电子在导带与缺陷能级才以及缺陷能级与价带之间的辐射复合.     

Fe/Ti纳米多层薄膜退火初期的扩散行为

采用双室高真空磁控溅射装置在溅射功率60 W和工作气压0.5 Pa下直流磁控溅射沉积了调制比为1,设计调制周期18.0 nm的Fe/Ti纳米多层薄膜.利用横截面透射电镜(XTEM)、差示扫描量热分析仪(DSC)及小角和广角X射线衍射(SA/WAXRD)分析退火初期的扩散行为.实测调制周期16.2 nm,原始沉积Fe/Ti纳米多层薄膜由交替生长的纳米多晶α-Fe和α-Ti组成,调制界面清晰.Fe/Ti纳米多层薄膜热失稳过程包括亚层间的扩散、金属间化合物FeTi形成和长大3个阶段.退火温度为473 K时,保持与原始沉积相同的成分调制结构;退火温度升高到523 K,Fe与Ti亚层间发生互扩散,成分调制结构破坏,但相变未发生;达到最高退火温度623 K,过饱和固溶体α-Fe(Ti)和金属间化合物FeTi形成.     

Al 掺杂 T-ZnO 晶须的光致发光及场发射性能

用丝网印刷法将Al掺杂的T-ZnO晶须制备成薄膜,以研究其结构形貌、光致发光及场发射性能.所有发光谱均由强的紫外光发射(发光中心集中在373~383 nm)和宽的黄绿光发射(发光中心集中在510~540 nm)组成.ZnO薄膜的内部缺陷浓度决定黄绿光发射的强度.掺杂0.5 mol/L的Al样品的紫外光强度最大,场发射性能最好,其开启电场和阈值电场分别达到0.74 V/μm和2.6 V/μm,场增强因子值为30249.     

Fe／Ti纳米多层薄膜退火初期的扩散行为

采用双室高真空磁控溅射装置在溅射功率60 W和工作气压0.5 Pa下直流磁控溅射沉积了调制比为1,设计调制周期18.0 nm的Fe/Ti纳米多层薄膜.利用横截面透射电镜(XTEM)、差示扫描量热分析仪(DSC)及小角和广角X射线衍射(SA/WAXRD)分析退火初期的扩散行为.实测调制周期16.2nm,原始沉积Fe/Ti纳米多层薄膜由交替生长的纳米多晶α-Fe和α-Ti组成,调制界面清晰.Fe/Ti纳米多层薄膜热失稳过程包括亚层间的扩散、金属间化合物FeTi形成和长大3个阶段.退火温度为473 K时,保持与原始沉积相同的成分调制结构;退火温度升高到523 K,Fe与Ti亚层间发生互扩散,成分调制结构破坏,但相变未发生;达到最高退火温度623 K,过饱和固溶体α-Fe(Ti)和金属间化合物FeTi形成.     

离子注入对CuxS薄膜特性的影响

讨论了薄膜经氮离子注入后对薄膜的特性影响,铜硫化合物薄膜是经两次蒸发制备在玻璃上．实验发现氮离子束注入引起了薄膜中的铜与硫成分的改变,很明显的观察到样品中的铜对硫的比值随注入离子束强度的增加而变大．     

三乙醇胺含量对化学浴法制备硫化铜薄膜的影响

为了研究三乙醇胺(TEA)在化学水域沉积法工艺中的作用,本文以氯化铜, 硫脲, 氨水和三乙醇胺为原料, 采用化学浴沉积法在玻璃基底表面成功制备了硫化铜薄膜. 研究了三乙醇胺不同含量对薄膜的厚度、结构,、形貌和光学性能的影响, 并分析了反应机理. 研究结果表明:三乙醇胺在反应中起到络合剂的作用,随着三乙醇胺含量的增加, 反应诱导时间延长到23 min; 沉积时间相同的情况下,组成薄膜的颗粒粒径变大且薄膜增厚240 nm, 同时透射率呈现出减小的趋势.      

Nc-Si Thin Film Deposited at Low Temperature and Nc-Si Heterojunction Solar Cel

IntroductionMuchworkhasbeendonetostudythestruc-tureandpropertiesofthehydrogenatednano-crystallinesilicon(nc-Si∶H)thinfilmsinthepastfewyears[1～3].Ithasbeenreportedthatthesefilmshavemanygoodopticalandelectricalproper-ties[4～6].Severaldepositiontechniqueshavebeenestablishedtopreparenc-Si∶Hthinfilms,includ-ingplasmaenhancedchemicalvapordeposition(PECVD),hotwirechemicalvapordeposition(HWCVD)[7,8]andreactivemagnetronsputter-ing[9]withthesubstratetemperaturevaryingfrom150to250°C.Comparedwi…     

DETERMINING THE CONTENT OF JASMINODIN IN MEI RONGCAPSULE WITH THIN LAYER CHROMATOGRAPHY

Cardenia Jasminoides may bring about the ef-fects of laxative, being antipyretic, diuresis detoxi-cation, and anti--inflammation[1J. It has been provedthat the main active component of Cardenia Jas-minodin Eills is the iridoid glycosides representedby Jasminodin['.'J. Recently, with the improvementof people's living conditions in China,Cardenia Jas-minodin Eills has been applied in several kind ofcosmetics and proved to be effective in eliminatingacnes, disinfecting and beautifying the ski…     

Enhancing the Efficiencies of Organic Photovoltaic and Organic Light-Emitting Diode Devices by Regular Nano-Wrinkle Patterns

Organic photovoltaic (OPV) cells and organic light-emitting diodes (OLEDs) are energy harvesting and generation devices that have attracted great attention these years because of their low costs, thin film structures, flexibility and environment-friendly manufacturing processes. For such thin film devices, photon management methods that increase the light absorption of OPV cells and the light extraction from OLEDs are highly desirable. Here, we report the experimental efforts to fabricate geometrically tunable and spontaneously formed nano-wrinkle structures with large areas, and the theoretical results on photon management with the nano-wrinkles.     

Effect of oxygen content on structural and optical properties of single Cu2O film by reactive magnetron sputtering method

Cuprous oxide (Cu₂O) thin films have been deposited on glass substrate by reactive magnetron sputtering method using Cu target and argon oxygen gas atmosphere. Effect of oxygen flow rate on structural and optical properties of thin films has been discussed. The results of X-ray diffraction, ultraviolet-visible spectrophotometry and atomic force micrograph indicated that the condition window for single Cu₂O phase was about 3.8 to 4.4 cm³/min, and the optimum oxygen flow rate was 4.2 cm³/min. The optical band gap E _g of Cu₂O film was determined by using the data of transmittance versus wavelength, and slightly decreased from 2.46 to 2.40 eV with the increase of oxygen flow rate from 3.8 to 4.4 cm³/min. The Cu₂O film formed at the oxygen flow rate of 4.2 cm³/min had an optical band gap of 2.43 eV.     

三氧化钨薄膜的制备及其亲水/疏水性能转变研究

在预先用聚多巴胺薄膜处理的玻璃基底上,采用溶胶-凝胶法制备出三氧化钨(WO3)薄膜,用X射线衍射(XRD)和扫描电子显微镜(SEM)表征手段来分析其物相组成和形貌特征.对WO3薄膜在UV光照射下和黑暗的环境中发生亲水/疏水转换的现象进行研究,最后得出WO3薄膜表面润湿性转化的机理.     

孕妇血清铜值与胎盘功能的关系

用火焰原子吸收法测定了孕28～40周正常孕妇83例,孕37～40周重度妊娠高血压综合征及41周以上妊娠妇女42例的血清铜值,并与同期尿E/C比值及新生儿Apgar评分相比较,结果提示:孕妇血清铜值在40周前随孕周的增长而增高。41周以上妊娠,重度妊高征血清铜值偏低。当尿E/C比值<10及Apgar评分≤7分时,孕妇血清铜值低,提示孕晚期母亲血清铜值可作为判断胎盘功能的辅助指标。     

溶胶－凝胶法制备氧化铝薄膜

以异丙醇铝为原料，研究了溶胶的浓度、粘度及加入电解质的种类，电解质的浓度和焙烧温度等条件对成膜的影响．     

Effect of LaNiO3 Interlayer on the Dielectric Properties of Ba0.5Sr0.5TiO3 Thin Film on Si Substrate

In this study, (100)-oriented growth of Ba0.5Sr0.5TiO3 (BST) /LaNiO3 (LNO) stacks was obtained on Pt(lll)/SiO2/Si substrates by r.f. magnetron sputtering. The orientation of the subsequently deposited Ba0.5Sr0.5TiO3 thin film was strongly affected by the LNO under layer, and the BST thin film deposited on the (100)LNO-coated Si substrate was also found to have a significant (100)-oriented texture. Effects of LNO interlayer on the dielectric properties of BST thin films were investigated. As a result, the tunability of BST thin film was greatly improved with the insertion of (100)-oriented LNO under layer with proper thickness.     

人脑尾状核中铜锌铝含量初步测定

本文系用原子吸收光谱法测定了12侧男性成年人尸体和30侧新生儿尸体的脑尾状核内Cu、Zn、Al的含量。结果:求得成人尾状核中Cu正常平均含量为24.4±8.93mg/kg干组织重(以下单位同),Zn为129.92±89.17,Al为2.38±0.77。新生儿的正常平均含量分别为:Cu 11.00±5.49,Zn 75.35±27.52,A1 1.72±0.56。结果表明成人以上各数值均高于新生儿。