JXK6620CEV纯电动客车设计

介绍JXK6620CEV纯电动客车的目标市场、设计理念、整车性能参数、技术方案及适用的运营模式,为新能源汽车推广提供借鉴。     

增程/插电式电动商用车控制策略和经济性分析

对一款增程/插电式电动商用车进行研发。设计了该电动车辆的系统拓扑结构,分析了其工作原理。基于中国典型城市工况下进行了车辆的行驶仿真,得到了增程/插电式商用车的油耗和经济性。     

Development of the large increment method in analysis for thin and moderately thick plates

Many displacement-based quadrilateral plate elements based on Mindlin-Reissner plate theory have been proposed to analyze the thin and moderately thick plate problems. However, numerical inaccuracies of some elements appear since the presence of shear locking and spurious zero energy modes for thin plate problems. To overcome these shortcomings, we employ the large increment method （LIM） for the analyses of the plate bending problems, and propose a force-based 8-node quadrilateral plate （8NQP） element which is based on Mindlin- Reissner plate theory and has no extra spurious zero energy mode. Several benchmark plate bending problems are presented to illustrate the accuracy and convergence of the plate element by comparing with the analytical solutions and displacement-based plate elements. The results show that the 8-node plate element produces fast convergence and accurate stress distributions in both the moderately thick and thin plate bending problems. The plate element is insensitive to mesh distortion and it can avoid the shear locking for thin plate analysis.     

钢板装卸桥的吊具及其连接应用

介绍几种形式钢板装卸桥的吊具及其与起升机构的不同的连接方式,分析了装卸桥作业时根据吊运物件特性选择合理的吊具和合理的连接方式,以满足快捷更换、高效装卸、安全可靠的要求.     

基于机器视觉的农产品自动分选机机构设计

介绍了用于分选农产品的自动分选机的设计,包括机械结构的总体设计和主要机械部件的设计选型,最后采用PRO/E对分选机进行三维设计.     

旋喷法改善可液化地基的方法

分析了砂土液化的机理及形成条件,率先提出了利用旋喷法处理砂土液化,并介绍了旋喷法提高地基抗液化的加固机理及地基处理设计方法,旋喷法处理砂土液化具有经济、快速、实用、高效等特点。     

四链夹持式注入头驱动装置的设计与分析

在双链驱动方案的基础上设计四链驱动装置．同时对驱动机构的装配工艺进行了分析,确定了合理的装配方法．最后分别采用理论计算与有限元分析的方法对驱动装置的关键部件进行了结构与强度分析．分析结果表明所设计的驱动装置结构合理,能够满足设备工程实践的要求．     

LJ276M电喷汽油机进气系统设计及优化

在LJ276M汽油机原机参数和设计要求基础上,运用亥姆霍兹理论计算谐振频率、进气管长度及管径等结构参数,快速设计全新谐振进气系统.应用仿真软件GT-Power建立LJ276M电喷汽油机工作过程计算模型,通过采用快速成型技术及试验验证方法最终确定进气系统各结构参数.试验证明装配优化计算后的进气系统后,发动机的功率和转矩的最大增幅均达到13%.     

DC gain analysis of scaled CMOS op amp in Sub-100 nm technology nodes: A research based on channel length modulation effect

Metal-oxide-semiconductor field effect transistor (MOSFET) intrinsic gain degradation caused by channel length modulation (CLM) effect is examined. A simplified model based on Berkeley short-channel insulator-gate field effect transistor model version 4 (BSIM4) current expression for sub-100 nm MOSFET intrinsic gain is deduced, which only needs a few technology parameters. With this transistor intrinsic gain model, complementary metal-oxide-semiconductor (CMOS) operational amplifier (op amp) DC gain could be predicted. A two-stage folded cascode op amp is used as an example in this work. Non-minimum length device is used to improve the op amp DC gain. An improvement of 20 dB is proved when using doubled channel length design. Optimizing transistor bias condition and using advanced technology with thinner gate dielectric thickness and shallower source/drain junction depth can also increase the op amp DC gain. After these, a full op amp DC gain scaling roadmap is proposed, from 130 nm technology node to 32 nm technology node. Five scaled op amps are built and their DC gains in simulation roll down from 69.6 to 41.1 dB. Simulation shows transistors biased at higher source-drain voltage will have more impact on the op amp DC gain scaling over technology. The prediction based on our simplified gain model agrees with SPICE simulation results.