纳米添加剂量对沥青混合料性能的影响

研究了不同剂量的纳米粉粒分别添加到基质沥青和沥青混合料中后对沥青混合料性能的影响．通过室内原样沥青常规试验和沥青混合料的马歇尔试验研究,分析了不同纳米剂量对沥青混合料马歇尔技术指标的影响曲线,得出纳米添加剂量为最佳沥青用量的5％左右时沥青混合料性能最优．     

Formation of nanometer coherent structures during spinodal decomposition and ordering coexistence phase transformation in Fe-24Al alloys

The nanometer coherent structure evolution of spinodal decomposition and ordering coexistence phase transformation in Fe-24Al alloys is investigated by the microscopic phase field kinetic model. The results show that the concentration and long-range order parameters all continuously change towards to their equilibrium values during phase transformation. With the increase of elastic interaction energy, the anisotropy along [01] or [10] elastic soft direction is more obvious and the time reaching equilibrium state is also shortened. According to the results, the formation of nanometer coherent structures during phase transformation is composed of the initial decreasing stage of order degree stage, the incubation stage, the continuous increasing stage of concentration order parameter and long-range order parameter, and the later stable stage. The spinodal decomposition and ordering is interaction; the initial ordering stage is a necessary condition of the coexistence phase transformation. The nanometer coherent structures are not found to grow during the whole phase transformation. The simulation results are in accordance with the results in experiment obtained by the aging treatment in Fe-24Al alloys.     

锂离子电池负极纳米SnO2／C复合材料的制备与性能

采用一种简单低成本的方法,以蔗糖作为碳源,在氮气气氛下以不同温度焙烧合成纳米SnO2／C复合材料．并对所得样品进行XRD,TEM表征及电化学性能测试．XRD结果表明复合材料中碳是无定形的．透射电镜（TEM）结果显示SnO2平均粒径为10nm左右,并被碳均匀包裹．纳米SnO2／C复合材料作为锂离子电池负极材料呈现高的库伦效率和较好的循环稳定性．     

单晶铋纳米带的制备与生长机制研究

采用溶剂热还原金属铋离子的方法,以硝酸铋为原料,乙二醇为溶剂和还原剂,聚乙烯吡咯唍酮(PVP)为稳定剂制备了单晶铋纳米带。采用X射线衍射(XRD)、高分辨透射电镜(HRTEM)对所得样品的结构和形貌进行表征。结果表明:金属铋纳米带结构完美、表面洁净、内部无缺陷无位错,是一种理想的单晶准一维纳米结构;纳米带宽度为50 nm～3 m,厚度约为几十nm,长度可以达到几十μm;铋纳米带属于菱面体结构,空间群为R3m(166),JCPDS卡片号为44-1246;纳米带沿着[110]或者[-114]方向生长。     

基于原子力显微技术的热再生混合料中新旧沥青融合程度量化指标和方法

厂拌热再生混合料中新旧沥青的融合程度对再生混合料设计及性能均有重要影响,目前已有较多学者开展了融合程度的量化研究,但现有量化方法在应用时大多需采用化学试剂对再生沥青进行抽提回收,这无疑会破坏混合料中新旧沥青真实的融合状态。基于原子力显微技术直接针对热再生混合料试件提出一种量化新旧沥青真实融合程度的方法。为此,首先在沥青层面探究了利用原子力显微技术中得到的力学、化学指标量化沥青融合程度的可行性,发现在单一沥青层面,DMT模量指标与宽带点光谱量化得到的羰基指数与沥青老化及融合特征相关性较好;接着选取DMT模量和羰基指数指标建立了完全混溶再生沥青纳观性能的预估方程;然后,在混合料层面利用不同来源的沥青对量化指标的适用性进行了检验,发现相较于羰基指数,采用DMT模量指标量化再生混合料中新旧沥青融合程度的误差更小;最后,基于该指标在混合料层面初步给出了直接量化厂拌热再生混合料中新旧沥青融合程度的方法;并以3种旧料掺量的再生混合料为例,对量化方法的应用进行了介绍。     

纳米改性沥青制备和路用性能研究

为提高基质沥青的路用性能,采用纳米Ⅰ作为改性剂,并选用A,B和C作为分散剂,制备了纳米改性沥青并进行路用性能评价;同时将纳米工与SBS复合进行沥青改性,以考察纳米Ⅰ对聚合物改性沥青性能的影响.对其中的优选改性方案,进行DSR和BBR试验,进一步评价其路用性能.结果表明:纳米Ⅰ可以明显改善沥青的性能,使沥青的高温性能得以显著提高;纳米粒子的表面改性对沥青的性能有显著影响,有必要开发适用于沥青的纳米粒子表面改性方案,以充分发挥粒子的纳米效应;纳米Ⅰ对SBS改性沥青的影响表现为高、低温路用性能的全面提高.     

表面处理剂对CuInS2纳米晶体分散性的影响

选用表面活性剂聚乙烯醇缩丁醛（PVB）和聚乙烯吡咯烷酮（PVP）,以及偶联剂KH550、KH570等表面处理剂,来研究体系中添加表面处理剂对溶剂热法合成的CuInS2纳米晶体分散性的影响.利用X-射线粉末衍射仪、EDS能谱、扫描电镜（SEM）和紫外-可见近红外分光光度计对纳米晶体的结构、原子配比、形貌和光吸收性能等进行表征.结果表明：体系中添加少量（总质量的0.1%）表面处理剂制备的CuInS2纳米晶体团聚现象能得到有效改善,其中偶联剂KH570和表面活性剂PVP改性效果佳.     

纳米技术在汽车上的应用

由于纳米材料具有微粒尺寸小、表面积大、透光性好、抗紫外线、抗老化、高强度和韧性等特殊性能，因此随着纳米材料的研制和开发，纳米技术将在汽车工业多个领域中得到广泛应用，并将逐步改善或替代传统产品。     

纳米防雾技术在北京公交车上的应用

当物质到纳米尺度以后,大约是在0．1-100纳米这个范围空间,物质的性能就会发生突变,出现特殊性能。这种既具不同于原来组成的原子、分子,也不同于宏观的物质的特殊性能构成的材料,即为纳米材料。我们使用的技术就是基于纳米二氧化钛的纳米尺度下超亲水的特点进行防雾、自洁、杀菌的。     

DC gain analysis of scaled CMOS op amp in Sub-100 nm technology nodes: A research based on channel length modulation effect

Metal-oxide-semiconductor field effect transistor (MOSFET) intrinsic gain degradation caused by channel length modulation (CLM) effect is examined. A simplified model based on Berkeley short-channel insulator-gate field effect transistor model version 4 (BSIM4) current expression for sub-100 nm MOSFET intrinsic gain is deduced, which only needs a few technology parameters. With this transistor intrinsic gain model, complementary metal-oxide-semiconductor (CMOS) operational amplifier (op amp) DC gain could be predicted. A two-stage folded cascode op amp is used as an example in this work. Non-minimum length device is used to improve the op amp DC gain. An improvement of 20 dB is proved when using doubled channel length design. Optimizing transistor bias condition and using advanced technology with thinner gate dielectric thickness and shallower source/drain junction depth can also increase the op amp DC gain. After these, a full op amp DC gain scaling roadmap is proposed, from 130 nm technology node to 32 nm technology node. Five scaled op amps are built and their DC gains in simulation roll down from 69.6 to 41.1 dB. Simulation shows transistors biased at higher source-drain voltage will have more impact on the op amp DC gain scaling over technology. The prediction based on our simplified gain model agrees with SPICE simulation results.