NEURAL NETWORK FOR THE QUANTUM CORRECTION OF NANOSCALE SOI MOSFETS

The study of silicon on insulator(SOI)MOSfield effect transistors(MOSFETs)has been ofgreat interest in recent years[1-2].As the di mensionsof SOI MOSFETs are aggressively scaled into thenanoscale regi me,the inversion carriers shift appar-ently away fromthe interface of Si O2/Si due to thequantumeffect.So it is quite necessary to take thequantumeffect into consideration in SOI MOSFETmodeling and si mulation.The Schr dinger-Poisson(SP)equations subject to an appropriate boundaryc…     

载重汽车组合梁焊接完整性分析

基于优化设计的思想,考虑焊点传力程度和焊点应力集中等综合因素,运用弹塑性有限元法,对载重汽车组合梁焊接联接进行完整性分析。以自卸式汽车为例,对两种焊接方案和焊点直径影响进行对比,得出了焊点数量、布局等对焊接组合梁承载能力的影响。     

Subthreshold current model of fully depleted dual material gate SOI MOSFET

Dual material gate SOI MOSFET with asymmetrical halo can suppress short channel effect and increase carriers transport efficiency. The analytical model of its subthreshold drain current is derived based on the explicit solution of two-dimensional PoissonCs equation in the depletion region. The model takes into consideration the channel length modulation effect and the contribution of the back channel current component. Its validation is verified by comparision with two dimensional device simulator MEDICI.