微波除冰效率关键技术研究

为了提高微波除冰效率,实现冬季道路快速微波除冰,对影响微波除冰效率的关键因素(微波频率和道路材料)进行了仿真和试验研究。通过对微波除冰效率的分析,提出了以冰层和路面结合处温度到达0℃所需的时间作为微波除冰效率的判定指标。建立了微波除冰模型,运用CST、Matlab和ANSYS仿真软件,得出了微波除冰效率与微波频率、不同介质损耗角正切的道路材料关系,并通过试验验证了仿真结论的合理性。研究结果表明:相对于2.45 GHz微波,5.8 GHz微波能够提高微波除冰效率4~6倍;相对于普通沥青混凝土路面,使用铁磁性材料加铺层能够提高除冰效率3~5倍。     

Effect of LaNiO3 interlayer on the dielectric properties of Ba0.5Sr0.5TiO3 thin film on Si substrate

In this study, (100)-oriented growth of Ba_0.5Sr_0.5TiO₃ (BST) /LaNiO₃ (LNO) stacks was obtained on Pt(111)/SiO₂/Si substrates by r.f. magnetron sputtering. The orientation of the subsequently deposited Ba_0.5Sr_0.5TiO₃ thin film was strongly affected by the LNO under layer, and the BST thin film deposited on the (100)LNO-coated Si substrate was also found to have a significant (100)-oriented texture. Effects of LNO interlayer on the dielectric properties of BST thin films were investigated. As a result, the tunability of BST thin film was greatly improved with the insertion of (100)-oriented LNO under layer with proper thickness. Foundation item: the National Key Lab of Nano/Micro Fabrication Technology (No. 9140C 790310060C79) and the National Natural Science Foundation of China (No. 60701012)     

Nc-Si Thin Film Deposited at Low Temperature and Nc-Si Heterojunction Solar Cel

IntroductionMuchworkhasbeendonetostudythestruc-tureandpropertiesofthehydrogenatednano-crystallinesilicon(nc-Si∶H)thinfilmsinthepastfewyears[1～3].Ithasbeenreportedthatthesefilmshavemanygoodopticalandelectricalproper-ties[4～6].Severaldepositiontechniqueshavebeenestablishedtopreparenc-Si∶Hthinfilms,includ-ingplasmaenhancedchemicalvapordeposition(PECVD),hotwirechemicalvapordeposition(HWCVD)[7,8]andreactivemagnetronsputter-ing[9]withthesubstratetemperaturevaryingfrom150to250°C.Comparedwi…     

直流脉冲磁控溅射制备ITO薄膜及其光电性能

利用直流脉冲磁控溅射法在室温下制备ITO薄膜.通过台阶仪、紫外-可见分光光度计、四探针仪等表征技术,研究了沉积气压、溅射功率,以及Ar/O2流量比等对ITO薄膜沉积速率、光学性能,以及电学性能的影响.研究结果表明,薄膜沉积速率随沉积气压的增大而减小,随功率的增大而增大;方块电阻随气压的增大而增大,随功率的增大而减小;可见光平均透过率主要受O2流量的影响.在沉积气压为0.5 Pa,Ar/O2流量比为20∶0,溅射功率为250 W,膜厚为200 nm时,薄膜的方块电阻为27Ω/□,可见光平均透过率为84.1%.     

Effect of LaNiO3 Interlayer on the Dielectric Properties of Ba0.5Sr0.5TiO3 Thin Film on Si Substrate

In this study, (100)-oriented growth of Ba0.5Sr0.5TiO3 (BST) /LaNiO3 (LNO) stacks was obtained on Pt(lll)/SiO2/Si substrates by r.f. magnetron sputtering. The orientation of the subsequently deposited Ba0.5Sr0.5TiO3 thin film was strongly affected by the LNO under layer, and the BST thin film deposited on the (100)LNO-coated Si substrate was also found to have a significant (100)-oriented texture. Effects of LNO interlayer on the dielectric properties of BST thin films were investigated. As a result, the tunability of BST thin film was greatly improved with the insertion of (100)-oriented LNO under layer with proper thickness.     

Ce掺杂的WO_3薄膜的电学性质

在磁控溅射仪上用直流Ce和W共同磁控溅射方法,在载玻片上沉积Ce掺杂的WO_3,薄膜,以研究溅射功率对该薄膜电学性质的影响.薄膜在550℃的空气中退火1 h,用X射线衍射和扫描电子显微镜分析薄膜的显微结构.结果表明:Ce掺杂后薄膜呈岛状结构生长,有利于薄膜沿b轴方向生长;当Ce和W的溅射功率分别为40 W和160 W时,薄膜的非线性系数最大,达到7.92.     

双离子束溅射淀积DLC膜的结构分析

用双离子束溅射法在５０℃以下的基底上淀积了类金刚石（ＤＬＣ）膜。对ＤＬＣ膜采用扫描电子显微镜、透射电子显微镜及拉曼谱仪进行了结构分析。通过对扫描电子显微镜观察，发现在ＤＬＣ膜中存在金刚石微晶。通过透射电子显微镜分析，确定金刚石微晶具有面心立方结构，计算出的晶格常数与标准值基本相同。通过拉曼光谱分析后，进一步验证了薄膜中金刚石微晶的存在并得出了膜中ＳＰ＾３Ｃ－Ｃ键所占的比例。     

Si基扩镓溅射Ga2O3反应自组装GaN薄膜

采用射频磁控溅射工艺在预沉积和预沉积后再分布的扩镓Si基上溅射Ga2O3薄膜氮化反应组装GaN薄膜。用红外透射谱（mR）、X射线衍射（XRD）、扫描电镜（SEM）、选区电子衍射（SAED）和荧光光谱（PL）对样品进行组成、结构、形貌和发光特性的分析。测试结果表明：采用此方法得到六方纤锌矿结构的GaN薄膜。同时显示预沉积的扩镓硅基较预沉积后再分布的扩镓硅基更适合GaN薄膜的生长。     

磁控溅射类金刚石的热稳定性

用磁控溅射的方法制备了类金刚石薄膜(DLC),对薄膜在600℃以下的温度进行真空退火,保温3小时,用椭偏仪和红外分光光度计对退火前后薄膜的结构和光学性能进行表征,结果表明,薄膜在400℃以下没有变化,400℃以上开始失氢,SP~2杂化结构开始增加,500℃以上薄膜的折射率上升,600℃时石墨化,红外吸收大幅度增加。