Effect of Cu Co-doping on the magnetism of Zn0.95Co0.05O films

Zn_0.95?x Co_0.05Cu _x O (atomic ratio, x = 0?C8%) thin films are fabricated on Si(111) substrate by reactive magnetron sputtering method. Detailed characterizations indicate that the doped Cu ions substitute the Zn²⁺ ions in ZnO lattice. The doped Cu ions are in +1 and +2 mixture valent state. The ferromagnetism of the Zn_0.95?x Co_0.05Cu _x O film increases gradually with the increase of the Cu⁺ ion concentration till x = 6%, but decreases for higher Cu concentration. Experimental results indicate that the increase of ferromagnetism is not owing to the magnetic contribution of Cu⁺ ions themselves, but owing to the enhancement of magnetic interaction between Co²⁺ ions, which suggests that p-type doping of Cu⁺ ions plays an important role in mediating the ferromagnetic coupling between Co ions.     

Cr掺杂4H-SiC电子结构的第一性原理计算

通过第一性原理计算研究了Cr掺杂4H-SiC电子结构和磁性.计算结果表明Cr掺杂引入空穴,产生自旋极化,Cr原子提供局域磁矩.计算了14种可能的掺杂组态,确定了最稳定的组态.磁耦合计算表明Cr原子磁矩通过Cr0:3d-C∶2p-Cr1∶3d链耦合,处于铁磁基态.Cr掺杂4H-SiC体系的铁磁机理是空穴作为载流子的双交换机制,C与Cr原子间强烈的p-d轨道间杂化作为铁磁交换的媒介.     

THIRD-HARMONIC GENERATION IN AN ASYMMETRIC QUANTUM WELL

ＩｎｔｒｏｄｕｃｔｉｏｎＴｈｅｎｏｎｌｉｎｅａｒｏｐｔｉｃａｌｐｈｅｎｏｍｅｎａｃｏｎｎｅｃｔｅｄｗｉｔｈｔｈｅｉｎｔｅｒｓｕｂｂａｎｄｔｒａｎｓｉｔｉｏｎｓｉｎａｎａｓｙｍｍｅｔｒｉｃｑｕａｎｔｕｍｗｅｌ（ＱＷ）ｈａｖｅｂｅｅｎｅｘｔｅｎｓｉｖｅｌ...