用离子辐照的快恢复二极管等离子体技术为什么比发射效率降低的快恢复二极管等离子技术好

文章依据较高线电压的扩展比较了具有扩展安全工作区(SOA)的2个4.5 kV二极管.为了改善反向恢复特性,必须降低通态过程中靠近阳极的过剩载流子浓度.为了控制阳极的注入效率,比较了工艺技术的2种状态,即发射掺杂降低和在p掺杂区离子辐照.根据正向低电流密度(如2 A/cm2)恢复时50%的低开关损耗,表明局部寿命控制技术比发射掺杂降低技术更具优势.因此,通态特性一致的器件选择了这种改善.此外,观察到了离子辐照二极管的软开关性能.由校准的计算机仿真提供了用实验方法得到的这种性能的解释.

Why is Fast Recovery Diode Plasma-Engineering With Ion-Irradiation Superior to That With Emitter Efficiency Reduction?

This paper presents the comparison of two 4.5 kV diodes with expanded safe operating area(SOA) in terms of an expansionto higher line voltages.In order to improve the reverse recovery characteristic the excess carrier concentration close to the anode during the on-state has to be reduced.To control the injection efficiency of the anode two state of the art technologies,the reduction of the emitter doping andthe ion irradiation in the p-doping region,are compared in this paper.The local lifetime control technique is shown to have major advantages compared to the emitter doping reduction technique in terms ofup to 50% lower switching losses at recovering from low forward current densities (e.g., 2 A/cm2).This improvement was obtained on deviceswith identical on-state characteristic.Additionally,a softer switching behavior is observed for the ionirradiated diodes.An explanation for this experimentally found behavioris provided by calibrated computer simulations.