| IGCT及其门极驱动电路研究 |
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| 引用本文： | 张婵,童亦斌,金新民.IGCT及其门极驱动电路研究[J].变流技术与电力牵引,2007(2):27-29,38. |
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| 作者姓名： | 张婵 童亦斌 金新民 |
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| 作者单位： | 北京交通大学新能源研究所,北京100044 |
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| 摘 要： | IGCT作为一种新型大功率半导体开关器件,吸取了GTO和IGBT的优点,但其驱动则需要借助配套的门极驱动电路板才能实现.介绍了IGCT的基本工作原理,并根据驱动电路的要求分析设计原理,对1 100 A/4 500V逆导IGCT集成门极驱动电路的设计方法进行了具体分析和研究,实验结果验证了设计方法的可行性和正确性.
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| 关 键 词： | IGCT 集成门极驱动电路 硬开通 硬关断 IGCT 门极驱动电路 电路研究 Circuit Gate Drive 结果验证 实验 分析设计 设计方法 集成 工作原理 电路板 IGBT 功率半导体开关器件 |
| 文章编号： | 1671-8410（2007）02-0027-03 |
| 修稿时间： | 2007-01-20 |
Research on IGCT and Gate Drive Circuit |
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| ZHANG Chan,TONG Yi-bin,JING Xin-min.Research on IGCT and Gate Drive Circuit[J].Converter Technology & Electric Traction,2007(2):27-29,38. |
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| Authors: | ZHANG Chan TONG Yi-bin JING Xin-min |
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| Institution: | New and Renewable Energy Research Institute, Beijing Jiaotong University, Beijing 100044 China |
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| Abstract: | IGCT is a new high power semiconductor, which combines the advantage of IGBT and GTO.However, to realise its drive should the gate take the supporting gate drive circuit the operation principle of IGCT is introduced firstly, and then the design principle in detail. A 1 100 A/4 500 v reverse conducting integrated,gate commutated thyristor gate drive circuit has been designed. The design method has been verified by serial experiments. |
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| Keywords: | IGCT Integrated Gate Drive Circuit Hard turn-on Hard turn-off |
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