| 酞菁铜薄膜有机静电感应三极管动作特性分析 |
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| 引用本文： | 梁海峰 王东兴 薛严冰. 酞菁铜薄膜有机静电感应三极管动作特性分析[J]. 大连铁道学院学报, 2004, 25(3): 71-74 |
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| 作者姓名： | 梁海峰 王东兴 薛严冰 |
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| 作者单位： | 大连交通大学电气信息学院，大连交通大学电气信息学院，大连交通大学电气信息学院 辽宁大连116028，辽宁大连116028，辽宁大连116028 |
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| 摘 要： | 利用有机半导体酞菁铜制作的静电感应三极管(OSIT)进行测试所得的数据，分析了酞菁铜／铝-肖特基势垒的整流特性和静态特性．利用线性插值的方法得到反向偏压下的整流关系式，对OSIT的不饱和静态特性作了进一步的解析，分析了VGS影响OSIT特性的原因．
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| 关 键 词： | 三极管 酞菁铜 反向偏压 有机半导体 肖特基势垒 铜薄膜 静电感应 线性插值 关系式 解析 |
Active Characteristics of thin Film Organic Static Induction Transistors Using Copper Phthalocyanine |
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| LIANG Hai-feng,WAMG Dong-xing,XUE Yan-big. Active Characteristics of thin Film Organic Static Induction Transistors Using Copper Phthalocyanine[J]. Journal of Dalian Railway Institute, 2004, 25(3): 71-74 |
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| Authors: | LIANG Hai-feng WAMG Dong-xing XUE Yan-big |
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| Abstract: | Based on the data obtained from the test of organic static induction transistors made by organic semi-conductor and material Copper Phthalocyanine, static and commutation characteristics are analyzed,and the charaeferistic of veverse bias is obtained by linear interpolation commutation. The unsaturation static characteristic of OSIT is further analyzed, and the cause affecting the OSIT's characteristic by V_(GS) is also discussed. |
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| Keywords: | organic static induction transistors organic semi-conductor material thin film transistors schottky potential barrier |
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