pared by Thermal OxidationZHEN

School, National University of Defense Technology,Changsha 410073,CHN;2. Department of Physics,Dalian University of Technology,Dalian 116023,CHN)ZnO thin films were fabricated on the P-Si,high resistivity Si,ceramic and N-Si substrates by thermal oxidation in air.The oxidation time was fixed to 1h at 300℃~800℃.The effects of different substrates such as the P-Si(111),the high resistivity Si,the ceramics substrates and the N-Si are investigated.To obtain high-quality ZnO films,some Zn films are also annealed in the oxygen.It is found that the ZnO films prepared on the high resistivity Si substrates exhibit the better excitonic ultraviolet (UV) emission,the ceramics substrates exhibit the better deep level visible emission.The ZnO fil