有源电压箝位串联HV IGBT的适用性和优化(二)

介绍了5.2 kV高压绝缘栅双极型晶体管(HV IGBTs)的成功串联应用.穿通型HV IGBT串联应用时要完全控制感应过电压,最大的障碍是拖尾电流的关断问题.可以证明,采用先进的电压箝位技术能够限制因关断拖尾电流而引起的第二个电压尖峰.阳极采用载流子寿命局部分布的IGBT很适合这种应用;拖尾电流间隔时间越短,关断损耗越小.文中集中讨论了穿通型HV IGBT器件串联时的最佳通态等离子体分布,HV IGBT的最新发展趋势似乎与讨论结论相一致.未来先进的HV IGBT技术可完全减轻第一代HV IGBT串联时的困难.

Suitability and Optimization of High-voltage IGBTs for Series Connection with Active Voltage Clamping (2)

The successful series combination of 5.2 kV high-voltage integrated gate bipolar transistors (HV IGBTs) is reported in this paper.The tail current cut-off encountered in punchthroush type HV IGBTs can represent a particularly severe handicap for the full control of the inductive voltage overshoot when connecting two devices in series.Advanced voltage clamping techniques are demonstrated,which can also limit the second voltage spike originating from the tail current cut off.It is shown in this paper,that IGBTs with a carrier lifetime profile localized at the anode side are particularly well suited for this application;the shorter the tail current interval,the lower the turn-off losses can be kept.The discussion focuses on the optimum on-state plasma distribution in punchthrough-type HV IGBTs with respect to series connection of these devices. The most recent trends in the development of HV IGBTs seem to be in line with the conclusions drawn in the discussion.Advanced future HV IGBT concepts may substantially ease the difficulties encountered in the series connection of first generation HV IGBTs as used experimentally in this paper.