| H面波导到微带过渡结构设计 |
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| 引用本文： | 兰云鹏,吴景峰,王抗旱. H面波导到微带过渡结构设计[J]. 舰船电子工程, 2013, 0(12): 155-156,162 |
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| 作者姓名： | 兰云鹏 吴景峰 王抗旱 |
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| 作者单位： | 河北半导体研究所,石家庄050051 |
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| 摘 要： | 讨论了一种H面磁耦合波导-微带过渡结构，该结构从波导短边平行于H面插入耦合探针。设计使用Ansoft公司的三维电磁仿真软件HFSS对影响指标的耦合探针插入深度、探针宽度等参数进行优化。按照参数优化最终结果加工一对背靠背样件，测试得到：在30GHz-36GHz频率范围内，插损优于1．5dB，回波损耗大于16dB。实验证明该过渡结构具有结构简单，插损小，频带宽，便于加工等优点。
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| 关 键 词： | H面 磁耦合 Ka波段 波导-微带 过渡 |
A Design of H-Plane Waveguide-Microstrip Transition |
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| LAN Yunpeng,WU Jingfeng,WANG Kanghan. A Design of H-Plane Waveguide-Microstrip Transition[J]. Ship Electronic Engineering, 2013, 0(12): 155-156,162 |
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| Authors: | LAN Yunpeng WU Jingfeng WANG Kanghan |
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| Affiliation: | (Hebei Semiconductor Research Institution, Shijiazhuang 050051) |
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| Abstract: | The paper discussed an H-plane waveguide-microstrip transition. The probe was parallel to H-plane and inserted to the waveguide from the short side of the waveguide. HFSS was used to simulate and optimize the location and width of the probe. A back to back transition was fabricated and measured, the result showed us that the insertion loss between 30GHz-36GHz was less than 0. 8dB, and the return loss was greater than 16dB. The structure had the advantages of simple structure, low insertion loss, wide band, easy fabrication etc. |
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| Keywords: | H-Plane magnetic coupling Ka band waveguide-microstrip transition |
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