|
|||||
|
|
Temperature dependence of microwave dielectric performance of silica |
|
| Authors: | Ting Zhang Meng-qiang Wu Shu-ren Zhang Ming He En Li Jin-ming Wang Da-hai Zhang Feng-mei He Zhong-ping Li |
| Affiliation: | 1. Teaching and Research Section of Physics, Chengdu Medical College, Chengdu, 610083, China 2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China 3. Beijing Aerospace Research Institutes of Materials and Processing Technology, Beijing, 100076, China |
| Abstract: | The dielectric properties of silica at temperature from 300 to 1 600K and at microwave frequency band are investigated. By use of material studio software, the lattice constant, band energy gap and optical permittivity of silica are calculated, and to be used as the key parameters to investigate the microwave dielectric properties of silica. It is found that its permittivity and loss are increased with increasing temperature. In addition, the ionic conduction loss caused by the defects in silica is very small from the calculation and the value is about 10?5 level at 2 000K. The application of this analysis allows to estimate the permittivity and dielectric loss of silica both at high temperature and microwave band, which is currently still difficult to be measured directly. |
| Keywords: | silica dielectric performance high temperature microwave |
| 本文献已被 维普 SpringerLink 等数据库收录！ | |