集成电路老化温度与耗散功率、频率关系的研究

在集成电路的可靠性试验中，耗散功率随着集成电路技术发展而增长，这也是由于温度和集成电路频率作用的关系。因此，在老化环境中，耗散功率会加大对老化的影响。文章将重点讨论在老化环境中，温度和频率的调整对集成电路老化所产生的作用。

Analysis of the Action of Static Power Dissipation in Burn-in Condition on Yield of VLSI

In experiments of assessing the reliability of integrated circuits,the leakage power is expected to increase with scaling of molectron technology,the increased leakage is a strong function of the elevated temperature and voltage stress.Under the bum-in(BI) conditions the elevated leakage power may cause increased post burn-in fallout.In this paper the impact elevated leakage and technology scaling in bum-in environment on post BI yield is analyzed.