| 离子注入对CuxS薄膜特性的影响 |
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| 引用本文： | 田宏,屈晓声.离子注入对CuxS薄膜特性的影响[J].大连铁道学院学报,2000,21(4):73-75. |
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| 作者姓名： | 田宏 屈晓声 |
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| 作者单位： | [1]大连铁道学院 [1] |
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| 摘 要： | 讨论了CuxS薄膜经氮离子注入后对薄膜的特性影响，铜硫化合物薄膜是经两次蒸发制备在玻璃上。实验发现氮离子束注入引起了CuxS薄膜中的铜与硫成分的改变，很明显的观察到样品中的铜对硫的比值随注入离子束强度的增加而变大。
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| 关 键 词： | CuxS薄膜 离子注入 相变 半导体薄膜 氮离子束 改性 |
The Influence of Cu_xS Thin Film by Ion Beam Implantation |
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| TIAN Hong,QU Xiao-sheng.The Influence of Cu_xS Thin Film by Ion Beam Implantation[J].Journal of Dalian Railway Institute,2000,21(4):73-75. |
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| Authors: | TIAN Hong QU Xiao-sheng |
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| Abstract: | The implantation technique has been introduced to CuxS thin films prepared by twice evaporation. Nitrogen ion beam causes a variation of copper and sulfur composition in the CuxS films. It shows that the ratio of copper to sulfur in the sample is enhanced with intension entering the CuxS films. The comparison of optical transmission between original and implanted sample demonstrates a new phase to emerge. |
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| Keywords: | CuxS thin films ion implantation phase transiti |
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