| 3300 V全SiC MOSFET功率器件开关特性研究 |
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| 引用本文： | 孙康康,陈燕平,忻兰苑,王晓年,余开庆,胡长风.3300 V全SiC MOSFET功率器件开关特性研究[J].机车电传动,2020(1):34-37,48. |
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| 作者姓名： | 孙康康 陈燕平 忻兰苑 王晓年 余开庆 胡长风 |
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| 作者单位： | 中车株洲所电气技术与材料工程研究院 |
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| 基金项目： | 国家重点研发计划项目(2017YFB1200902)。 |
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| 摘 要： | 为更好地发挥全SiC器件的开关速度快、损耗低等优势,研究了某款3300 V全SiC MOSFET器件的开关特性。首先,通过理论分析阐述了开关变化过程,并给出了可量化的计算方法;其次,从驱动电阻、结温、回路杂散电感等方面探寻了开关特性变化的规律;最后,在样机上进行了验证。结果表明,文章中所述优化开关特性的方法对全SiC逆变器的工程应用有一定的指导意义。
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| 关 键 词： | 3300 V全SiC MOSFET 开关特性 驱动电阻 结温 杂散电感 |
Research on Switching Characteristics of 3300 V Full SiC MOSFET Power Module |
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| SUN Kangkang,CHEN Yanping,XIN Lanyuan,WANG Xiaonian,YU Kaiqing,HU Changfeng.Research on Switching Characteristics of 3300 V Full SiC MOSFET Power Module[J].Electric Drive For Locomotive,2020(1):34-37,48. |
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| Authors: | SUN Kangkang CHEN Yanping XIN Lanyuan WANG Xiaonian YU Kaiqing HU Changfeng |
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| Institution: | (CRRC ZIC Research Institute of Electrical Technology&Material Engineering,Zhuzhou,Hunan 412001,China) |
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| Abstract: | Depending on the advantages of SiC MOSFET with faster switching and lower on-state losses,the switching characteristics of a 3300 V full SiC MOSFET device were studied to make better use of the device.Firstly,the switching processes of the SiC device were illustrated in theory,and the quantifiable method was provided;secondly,the effects of gate drive resistors,junction temperature and stray inductance on switching characteristics were investigated;finally,a prototype test was carried out.The results indicated that the switching characteristics optimizing method as discussed can provide application guidance to the full SiC invertors. |
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| Keywords: | 3300 V full SiC MOSFET switching characteristics gate drive resistors junction temperature stray inductance |
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