| 有机静电感应三极管的有限元法仿真解析 |
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| 引用本文： | 井岩 王东兴. 有机静电感应三极管的有限元法仿真解析[J]. 大连铁道学院学报, 2002, 23(4): 45-49 |
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| 作者姓名： | 井岩 王东兴 |
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| 作者单位： | 大连铁道学院电气信息分院，辽宁大连116028 |
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| 基金项目： | 教育部留学归国人员科研启动基金资助项目. |
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| 摘 要： | 通过合理建立有机静电感应三极管（OSIT）的物理仿真模型及选取合适的结构参数，采用有限元法，对OSIT在不同偏压下仿真计算其内部电位分布，进行了探索性研究。依据仿真计算结果，获得OSIT导电沟道内部电位分布，进而分析OSIT的工作特点，以及OSIT的工作特性与偏压和结构参数的依赖关系。
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| 关 键 词： | 有限元法 仿真 有机静电感应三极管 半导体电子器件 |
Computer Simulation of the Resolution to Organic Static Induction Transistor by Finite Element Method |
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| JING Yan,WANG Dong-xing. Computer Simulation of the Resolution to Organic Static Induction Transistor by Finite Element Method[J]. Journal of Dalian Railway Institute, 2002, 23(4): 45-49 |
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| Authors: | JING Yan WANG Dong-xing |
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| Abstract: | Through the establishment of a physical model and the selection of structural parameters, finite elemet method was used to study the inner potential distribution of OSIT by computer simulation under diverse bias voltages. Based on the simulation results, the potential profile within electric channel of OSIT was obtained, the dependent relation among the operation characteristics, the bias voltage and structure parameter of OSIT was analyzed. |
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| Keywords: | finite element method (FEM) simulation organic static induction transistor |
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