反应离子刻蚀工艺中颗粒异常分析与改善

在使用反应离子刻蚀(RIE)工艺制造集成电路中,金属刻蚀后原介质层产生密集黑色颗粒物。采用了隧道扫描电镜(STM)的方法,对样片进行观测分析,结果表明该黑色颗粒为碳化后的胺类副产物。通过对反应过程的分析研究,确定了该问题产生的原因。为了解决该问题,在不改变工艺压力和温度的情况下,调整射频功率来提高反应效率。调整完成后进行了实验验证,结果表明该方法切实有效,颗粒问题得到了明显改善。

Analysis and Improvement of Particle Abnormalities in Reactive Ion Etching Process

In the manufacture of integrated circuits using reactive ion etching(RIE)technology,dense black particles are produced in the original dielectric layer after metal etching.Using the tunnel scanning electron microscope(STM)method,the sample was observed and analyzed,and the results showed that the black particles were carbonized amine by-products.Through analysis and research on the reaction process,the cause of the problem was determined.In order to solve this problem,the RF power was adjusted to improve the reaction effi ciency without changing the process pressure and temperature.After the adjustment was completed,the experimental verifi cation was carried out,and the results showed that the method was effective and the particle problem was signifi cantly improved.