| 基于ANSYS软件的功率器件寄生电容建模分析 |
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| 引用本文： | 谢鹏飞,方华松,刘朝瑜.基于ANSYS软件的功率器件寄生电容建模分析[J].船电技术,2020(4):44-47,50. |
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| 作者姓名： | 谢鹏飞 方华松 刘朝瑜 |
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| 作者单位： | 船舶综合电力技术重点实验室;武汉恩硕科技有限公司 |
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| 摘 要： | 大功率变频器中电磁兼容问题是不可被忽视的。其中传导干扰会影响输出波形,降低电能质量。IGBT的寄生电容对于传导干扰有很大影响,本文对功率器件中IGBT的寄生电容形成原理和计算方法进行了分析。在此基础上运用有限元仿真软件ANSYSQ3D建立了基于英飞凌FZ1200R17HE4较为精确的模型。最后通过实验测量与仿真结果进行对照,仿真结果很好的对应了实验结果,本文所提方法能更准确的建立IGBT相关杂散参数的模型。
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| 关 键 词： | 寄生电容 有限元仿真 Q3D 电磁兼容 |
Modeling Analysis on Parasitic Capacitance of Power Devices by Using ANSYS |
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| Xie Pengfei,Fang Huasong,Liu Chaoyu.Modeling Analysis on Parasitic Capacitance of Power Devices by Using ANSYS[J].Marine Electric & Electronic Technology,2020(4):44-47,50. |
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| Authors: | Xie Pengfei Fang Huasong Liu Chaoyu |
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| Institution: | (National Key Laboratory of Science and Technology on Vessel Integrated Power System;Wuhan Enshou Technology Co.,Ltd,Wuhan 430062,China) |
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| Abstract: | The electromagnetic compatibility problems in high-power inverters cannot be ignored.Conducted interference affects the output waveform and reduces power quality.The parasitic capacitance of IGBT has a great influence on conducted interference.This paper analyzes the principle and calculation method of parasitic capacitance of IGBT in power device.Based on this,a more accurate model based on Infineon FZ1200 R17 HE4 is established by using finite element analysis software ANSYS Q3 D.Finally,the experimental results are compared with the simulation results and the simulation results correspond well to the experimental results.In conclusion,the more accurate model of IGBT with the related spurious parameters can be established by using the proposed method. |
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| Keywords: | parasitic capacitance finite element analysis Q3D electromagnetic compatibility |
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