| 短沟道MOSFET器件特性的理论研究 |
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| 引用本文： | 薛严冰,李晖.短沟道MOSFET器件特性的理论研究[J].大连铁道学院学报,2005,26(2):56-59. |
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| 作者姓名： | 薛严冰 李晖 |
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| 作者单位： | 大连交通大学电气信息学院,辽宁大连116028 |
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| 摘 要： | 通过求解泊松方程，从沟道长度调制效应、阈值电压变化及源极同沟道间的势垒变化三个方面详细分析了短沟道MOSFET的器件特性，给出了在短沟道下，描述上述三个参量的数学表达式，为短沟道MOSFET器件的结构设计提供了理论依据。
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| 关 键 词： | 短沟道 n沟道MOSFET 阈值电压 势垒 |
| 文章编号： | 1000-1670（2005）02-0056-04 |
| 收稿时间： | 2004-08-14 |
Theoretical Study of Short-Channel MOSFET Device Characteristics |
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| Xue YanBing;Li Hui.Theoretical Study of Short-Channel MOSFET Device Characteristics[J].Journal of Dalian Railway Institute,2005,26(2):56-59. |
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| Authors: | Xue YanBing;Li Hui |
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| Abstract: | Through solving possion equation, the characteristics of short-channel MOSFET device is analyzed in details in the following three aspects: the effect of channel length modulation , the change of threshold voltage and potential barrier decrease between source and channel. The mathematical expressions are established with the three parameters included. The expressions provide theoretical basis of structure design for short-channel MOSFET device. |
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| Keywords: | short-charmel N channel MOSFET threshold voltage potential barrier |
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