| SiC CMOS OPAMP高温模型和Hspice仿真 |
| |
| 引用本文： | 杨银堂,刘莉.SiC CMOS OPAMP高温模型和Hspice仿真[J].西南交通大学学报,2010,45(2). |
| |
| 作者姓名： | 杨银堂 刘莉 |
| |
| 作者单位： | 西安电子科技大学宽禁带半导体材料与器件教育部重点实验室,陕西西安,710071 |
| |
| 基金项目： | 教育部科学技术研究项目，国家部委预研项目 |
| |
| 摘 要： | 为研制具有高温稳定性的SiC CMOS(complementary metal-oxide-semiconductor)OPAMP(operationalamplifier),对PMOST(P-type metal-oxide-semiconductor transistor)输入标准6H-SiC CMOS两级运算放大器的高温等效电路模型进行了推导,并对电路进行了Hspice仿真.仿真结果表明,在SiC MOS器件中,因受SiC/SiO2界面导带附近高界面态密度的影响,阈值电压随温度的变化并不像Si MOS器件那样呈线性变化,其沟道有效迁移率也并不与温度的-1.5次方成正比.此外,SiC MOS器件的沟道迁移率低,导致其跨导比相同尺寸下的Si器件的低,所以其开环增益也小于相同结构和尺寸的Si OPAMP.虽然标准的OPAMP单元对Si器件来说具有温度稳定性,但对SiC基材料来说需进一步修正.
|
| 关 键 词： | 高温模型 Hspice仿真 |
SiC CMOS OPAMP High Temperature Model and Hspice Simulation |
| |
| YANG Yintang,LIU Li.SiC CMOS OPAMP High Temperature Model and Hspice Simulation[J].Journal of Southwest Jiaotong University,2010,45(2). |
| |
| Authors: | YANG Yintang LIU Li |
| |
| Institution: | YANG Yintang,LIU Li(Key Lab.of WBG Semiconductor Materials , Devices of Education Ministry,Xidian University,Xi\'an 710071,China) |
| |
| Abstract: | The high temperature equivalent circuit of standard silicon carbide(SiC) CMOS(complementary metal-oxide-semiconductor) OPAMP(operational amplifier) with PMOST(P-type metal-oxide-semiconductor transistor) as input was drawn and its Hspice simulation was conducted to provide a foundation to further develop SiC CMOS OPAMP with temperature stability.The simulation result shows that because a high interface trap exists,variation of threshold voltage with temperature is not linear as that of Si MOS devices,and ef... |
| |
| Keywords: | SiC CMOS OPAMP SiC CMOS OPAMP high temperature model Hspice simulation |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
