Al 掺杂 T-ZnO 晶须的光致发光及场发射性能

用丝网印刷法将Al掺杂的T-ZnO晶须制备成薄膜,以研究其结构形貌、光致发光及场发射性能.所有发光谱均由强的紫外光发射(发光中心集中在373~383 nm)和宽的黄绿光发射(发光中心集中在510~540 nm)组成.ZnO薄膜的内部缺陷浓度决定黄绿光发射的强度.掺杂0.5 mol/L的Al样品的紫外光强度最大,场发射性能最好,其开启电场和阈值电场分别达到0.74 V/μm和2.6 V/μm,场增强因子值为30249.     

SiNx薄膜的光致发光研究

用射频磁控溅射技术制备了氮化硅薄膜,室温下测试了薄膜的光致发光谱(PL)和光致发光激发谱(PLE),对薄膜材料的发光特性进行了分析.结果表明,在可见光范围内薄膜有很好的光致发光性质.在波长为381 nm的光激发下,SiNx薄膜的主要发光峰位于520 nm(2.38 eV), 553 nm(2.24 eV), 573 nm(2.16 eV),587 nm(2.11 eV)和627 nm(1.98 eV),主要来自电子在导带与缺陷能级才以及缺陷能级与价带之间的辐射复合.     

酞菁铜薄膜制备及其光学性能

采用真空蒸发的方法在ITO玻璃上制备了CuPc薄膜,并用分光光度计（U-3310）测试了四种不同厚度的CuPc薄膜的透射/吸收/反射率随波长变化情况,重点分析了其中的吸收规律.结果显示波段在340~370 nm和570~720 nm光吸收率基本上在90%左右,在480 nm吸收率最低,大部分光都已透射.同时用扫描电子显微镜对薄膜进行了成分分析,对照能谱图可以看出样品中含有碳、氧、铜等元素,与酞菁铜薄膜元素组成成分相符.     

ICP-PECVD法制备类金刚石膜

以CH4为放电气体,利用电感耦合等离子体化学气相沉积（ICP—PECVD）法制备了类金刚石薄膜,使用FTIR、AFM、台阶仪对薄膜进行了表征,并对薄膜的沉积过程进行了光谱诊断（OES）．研究了射频功率和基底在放电腔体中的位置对薄膜表面粗糙度、沉积速率和硬度的影响．实验结果表明：A位置处薄膜粗糙度随着功率的增加先减小后增大,随着射频功率的升高,薄膜的硬度逐渐增大,沉积速率先增大后减小,而薄膜硬度和沉积速率都随着与线圈中心距离的增加而减小．光谱诊断结果显示,随着功率的升高,Iβ/Iα和CH的强度呈增大趋势．结合上述研究结果,分析了影响薄膜生长的多种因素．     

ZnO纳米纤维的制备及其气敏特性研究

应用静电纺丝法制备了Zn（Ac）/PVP复合纳米纤维,经650℃煅烧后得到直径为95 nm的ZnO纳米纤维.分别采用扫描电子显微镜（SEM）和X射线衍射仪（XRD）对ZnO纳米纤维的表面形貌和晶体结构进行了表征.结果表明：ZnO纳米纤维由粒径约30～50nm的微粒组成,为粗糙多孔的网状结构.同时,研究了ZnO纳米纤维传感器的气敏特性.测试结果表明：该传感器在300℃时对低浓度（10 ppm）的乙醇具有高灵敏性和很好的选择性.另外,讨论了ZnO纳米纤维的气敏机制.     

氧空位对钴掺杂氧化锌稀磁半导体电子结构的影响

通过第一性原理计算对Co掺杂ZnO稀磁半导体的磁学性质和电子结构进行了研究,对氧空位甘现在不同位置时体系总能进行计算,证实氧空位更容易在Co原子附近生成,电子结构计算表明Co-3d自旋电子在费米能级附近产生了自旋极化现象,提供局域磁矩;通过研究两个Co原子掺杂ZnO体系的电子结构,证实铁磁性的产生是两个co原子耦合的结果,氧原子起到了一定的调制作用．     

酞菁铜薄膜制备及其光学性能

采用真空蒸发的方法在ITO玻璃上制备了CuPc 薄膜,并用分光光度计(U-3310)测试了四种不同厚度的CuPc薄膜的透射/吸收/反射率随波长变化情况,重点分析了其中的吸收规律.结果显示波段在340～370nm和570～720nm光吸收率基本上在90%左右,在480nm吸收率最低,大部分光都已透射.同时用扫描电子显微镜对薄膜进行了成分分析,对照能谱图可以看出样品中含有碳、氧、铜等元素,与酞菁铜薄膜元素组成成分相符.     

ZnO薄膜的溶胶—凝胶法制备及其光学性质研究

采用溶胶—凝胶法分别在透明玻璃和Si衬底上制备出了ZnO薄膜。分别采用X射线衍射仪(XRD)、能量分散谱仪(EDS)、紫外可见分光光度计和荧光光谱仪对所制样品进行测试,研究了样品的结构特性、成分和光学特性。X射线衍射结果表明,所制备的ZnO薄膜为六角纤锌矿结构;ZnO薄膜的EDS能谱图表明薄膜包含O元素和Zn元素;透射光谱表明ZnO薄膜质量高,在可见光范围内具有较高的透射率,平均透射率在85%以上;吸收光谱表明在带隙处存在吸收边;从PL光谱观察到了显著的紫外发射峰。     

N掺杂的ZnO薄膜发光性质研究

以醋酸锌为前驱体、醋酸铵为掺杂源,采用溶胶—凝胶法制备出N掺杂的ZnO薄膜,研究了其表面形貌、晶体结构和变温下的光致发光光谱,探讨了N作为受主掺杂的热力学性质。结果表明,掺杂后的薄膜是六角纤锌矿结构,光谱中表现出和N相关的受主束缚激子、自由激子—受主和施主—受主对发光现象。通过理论计算得到,N作为受主的电离能大小为0.255~0.310 eV,表明N是一种有效的浅受主,其能级上的电子在较小的能量下就能够电离。     

三氧化钨薄膜的制备及其亲水/疏水性能转变研究

在预先用聚多巴胺薄膜处理的玻璃基底上,采用溶胶-凝胶法制备出三氧化钨(WO3)薄膜,用X射线衍射(XRD)和扫描电子显微镜(SEM)表征手段来分析其物相组成和形貌特征.对WO3薄膜在UV光照射下和黑暗的环境中发生亲水/疏水转换的现象进行研究,最后得出WO3薄膜表面润湿性转化的机理.     

Preparation of Polysulfonamide/ZnO Nanocomposite by In-Situ Polymerization

Polysulfonamide/zinc oxide(PSA/ZnO) nanocomposite films with w(ZnO)=0.5% were prepared by in-situ polymerization based on 4,4′-diaminodiphenylsulfone and terephthaloyl chloride in the common solvent N,N-Dimethylacetamide(DMAc). Atomic force microscopy (AFM) was employed to observe the microstructure of the composite film. The thermal property was investigated by TGA and mechanical property was characterized by DXLL-1000 electromechanical material testing machine. The results showed that the breaking strength of the film containing 0.5% ZnO was great enhanced. The average size of ZnO particles was below 100 nm. The introduction of ZnO as nano filler in PSA react as UV shield effect and make the composite mechanical property improved.     

Sol-Gel提拉法制备ZAO薄膜及其光电性能

采用溶胶-凝胶（Sol-Gel）浸渍提拉法（基于组装的小型提拉装置）在普通玻璃片上制备出ZnO：Al（ZAO）薄膜,利用扫描电子显微镜、紫外-可见分光光度计、数字式四探针测试仪等检测手段分别对其进行了分析比较。结果表明：Al^3＋浓度为1．0％的ZAO薄膜表面最为致密均匀;随着退火温度的提高,薄膜的晶体平均粒径明显增大,电阻率逐渐减小;不同掺Al量的ZAO薄膜在可见光区的平均透光率均在70％以上,当Al^3＋浓度为1．5％时,550℃退火2h,电阻率最小,为5．9×10^-2Ω·cm。     

The Adhesion Improvement of Cubic Boron Nitride Film on High Speed Steel Substrate Implanted by Boron Element

Cubic boron nitride（c-BN） films were deposited on W6Mo5Cr4V2 high speed steel（HSS） substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by the bending beam method, scratch test, XPS and AFM. The experimental results show that the implantation of boron atom can reduce the internal stress and improve the adhesion strength of the films. The critical load of scratch test rises to 27.45 N, compared to 1.75 N of c-BN film on the unimplanted HSS. The AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. Then the composition of the boron implanted layer was analyzed by the XPS. And the influence of the boron implanted layer on the internal stress and adhesion strength of c-BN films were investigated.     

La0.7Sr0.3MnO3单晶外延薄膜制备及其磁电阻特性

为制得性能良好的涂层导体用La0.7Sr0.3MnO3(LSMO)缓冲层薄膜、研究LSMO薄膜的低磁场磁电阻效应,利用高分子辅助化学溶液沉积法,在LaAlO3(LAO)单晶基底上制备了一系列钙钛矿LSMO单晶外延薄膜.考虑氩气和氧气退火气氛对LSMO成相的影响,研究了氩气退火条件下样品的织构、形貌情况和氧气退火条件下制得的样品的输运性质及磁电阻效应.研究结果表明:氩气下采用高分子辅助的化学溶液沉积法有利于制备出低成本、高性能的涂层导体用单一LSMO缓冲层;氧气下退火制得的薄膜c轴取向生长良好,并且电阻-温度曲线出现绝缘体-金属相变,其磁电阻值在200~300 K范围内不随温度变化,在1 T磁场室温下磁电阻值约为-26.0 %.      

Effect of LaNiO3 Interlayer on the Dielectric Properties of Ba0.5Sr0.5TiO3 Thin Film on Si Substrate

In this study, (100)-oriented growth of Ba0.5Sr0.5TiO3 (BST) /LaNiO3 (LNO) stacks was obtained on Pt(lll)/SiO2/Si substrates by r.f. magnetron sputtering. The orientation of the subsequently deposited Ba0.5Sr0.5TiO3 thin film was strongly affected by the LNO under layer, and the BST thin film deposited on the (100)LNO-coated Si substrate was also found to have a significant (100)-oriented texture. Effects of LNO interlayer on the dielectric properties of BST thin films were investigated. As a result, the tunability of BST thin film was greatly improved with the insertion of (100)-oriented LNO under layer with proper thickness.     

退火温度对化学水浴沉积CdS薄膜性能的影响

采用化学水浴沉积法(CBD)制备了CdS薄膜,用扫描电镜(SEM)、能谱(EDS)、X射线衍射仪(XRD)、分光光度计进行检测.研究了退火温度对CdS薄膜表面形貌、成分、晶体结构和光学性能的影响.研究表明,CdS薄膜为微晶或是非晶态,S/Cd原子比在0.8左右,可见光透过率较高;随着退火温度的升高,薄膜结晶明显,但是透光率下降,禁带宽度范围在2.42～2.59eV之间.     

Microwave hydrothermal synthesis and characterization of ZnO nanostructures in aqueous solution

ZnO nanostructures were prepared in aqueous solution by microwave hydrothermal synthesis. Xray diffraction (XRD) and field emission scanning electron microscopy (FESEM) were used to characterize ZnO nanostructures (ZNs). The effects of pH, reaction temperature and reaction time on yield of ZnO were investigated. The yield of ZnO increased significantly with the increase of pH value, reaction temperature and reaction time. High yield and well crystallinity of ZNs could be obtained at 120°C for 60min by microwave hydrothermal synthesis. The spherical and rugby-like ZNs were obtained at 120°C without triethanolamine (TEA) and with TEA (mass ratio, $r = m_{Zn^{2 + } }$ : m _TEA = 1: 1), respectively. The concentration of Zn(OH) ₄ ^?2 ions in the reaction solution and TEA had an important effect on the nucleation and morphology of ZnO nanostructures. Mechanism for the formation of ZnO nanostructures was proposed.