脉冲激光沉积 ZnO 薄膜的微结构及发光性能

用波长为1064nm的Nd—YAG激光器，在氧的活性气氛中，通过激光烧蚀Zn靶在Si（111）衬底上获得ZnO薄膜．用电子显微镜（XRD和FESEM）表征ZnO薄膜的结构和表面形貌，用光致发光谱表征光学性质．实验中观察到紫外光发射和深能级的黄绿光发射．紫外光发射是ZnO薄膜的固有性质，深能级光发射是由于存在氧反位缺陷（OZn）．紫外光发射和深能级光发射的强度依赖于薄膜的表面粗糙度．表面粗糙度在nm级范围内的ZnO薄膜可以获得高强度的紫外光．     

Effect of LaNiO3 Interlayer on the Dielectric Properties of Ba0.5Sr0.5TiO3 Thin Film on Si Substrate

In this study, (100)-oriented growth of Ba0.5Sr0.5TiO3 (BST) /LaNiO3 (LNO) stacks was obtained on Pt(lll)/SiO2/Si substrates by r.f. magnetron sputtering. The orientation of the subsequently deposited Ba0.5Sr0.5TiO3 thin film was strongly affected by the LNO under layer, and the BST thin film deposited on the (100)LNO-coated Si substrate was also found to have a significant (100)-oriented texture. Effects of LNO interlayer on the dielectric properties of BST thin films were investigated. As a result, the tunability of BST thin film was greatly improved with the insertion of (100)-oriented LNO under layer with proper thickness.     

Effect of oxygen content on structural and optical properties of single Cu2O film by reactive magnetron sputtering method

Cuprous oxide (Cu₂O) thin films have been deposited on glass substrate by reactive magnetron sputtering method using Cu target and argon oxygen gas atmosphere. Effect of oxygen flow rate on structural and optical properties of thin films has been discussed. The results of X-ray diffraction, ultraviolet-visible spectrophotometry and atomic force micrograph indicated that the condition window for single Cu₂O phase was about 3.8 to 4.4 cm³/min, and the optimum oxygen flow rate was 4.2 cm³/min. The optical band gap E _g of Cu₂O film was determined by using the data of transmittance versus wavelength, and slightly decreased from 2.46 to 2.40 eV with the increase of oxygen flow rate from 3.8 to 4.4 cm³/min. The Cu₂O film formed at the oxygen flow rate of 4.2 cm³/min had an optical band gap of 2.43 eV.     

铁电-磁性复合薄膜的溶胶-凝胶法制备

用溶胶-凝胶法制备了Pb(Zr0.5Ti0.5)O3-Fe3O4复合薄膜。XRD研究表明,Pb(Zr0.5Ti0.5)O3呈完全(001)取向的,而Fe3O4颗粒则呈完全随机取向。在9V的测试电压下,薄膜的剩余极化Pr值为1.5μC/cm2;在1.5T的外磁场作用下,薄膜的剩余磁化强度和饱和磁化强度分别为0.67emu/cm3和3.5emu/cm3。铁电材料Pb(Zr0.5Ti0.5)O3与磁性纳米Fe3O4粒子的复合获得了室温共存的铁电性和磁性。     

Effect of LaNiO3 interlayer on the dielectric properties of Ba0.5Sr0.5TiO3 thin film on Si substrate

In this study, (100)-oriented growth of Ba_0.5Sr_0.5TiO₃ (BST) /LaNiO₃ (LNO) stacks was obtained on Pt(111)/SiO₂/Si substrates by r.f. magnetron sputtering. The orientation of the subsequently deposited Ba_0.5Sr_0.5TiO₃ thin film was strongly affected by the LNO under layer, and the BST thin film deposited on the (100)LNO-coated Si substrate was also found to have a significant (100)-oriented texture. Effects of LNO interlayer on the dielectric properties of BST thin films were investigated. As a result, the tunability of BST thin film was greatly improved with the insertion of (100)-oriented LNO under layer with proper thickness. Foundation item: the National Key Lab of Nano/Micro Fabrication Technology (No. 9140C 790310060C79) and the National Natural Science Foundation of China (No. 60701012)     

Friction and cutting properties of hot-filament chemical vapor deposition micro- and fine-grained diamond coated silicon nitride inserts

The micro-crystalline diamond (MCD) and fine-grained diamond (FGD) films are deposited on commercial silicon nitride inserts by the hot-filament chemical vapor deposition (HFCVD) method. The friction and cutting properties of as-deposited MCD and FGD films coated silicon nitride (Si₃N₄) inserts are comparatively investigated in this study. The scanning electron microscopy (SEM) and Raman spectroscopy are adopted to study the characterization of the deposited diamond films. The friction tests are conducted on a ball-on-plate type reciprocating friction tester in ambient air using Co-cemented tungsten carbide (WC-Co), Si₃N₄ and ball-bearing steel (BBS) balls as the mating materials of the diamond films. For sliding against WC-Co, Si₃N₄ and BBS, the FGD film presents lower friction coefficients than the MCD film. However, after sliding against Si₃N₄, the FGD film is subject to more severe wear than the MCD film. The cutting performance of as-deposited MCD and FGD coated Si₃N₄ inserts is examined in dry turning glass fiber reinforced plastics (GFRP) composite materials, comparing with the uncoated Si₃N₄ insert. The results indicate that the lifetime of Si₃N₄ inserts can be prolonged by depositing the MCD or FGD film on them and the FGD coated insert shows longer cutting lifetime than the MCD coated one.     

ZnO薄膜的溶胶—凝胶法制备及其光学性质研究

采用溶胶—凝胶法分别在透明玻璃和Si衬底上制备出了ZnO薄膜。分别采用X射线衍射仪(XRD)、能量分散谱仪(EDS)、紫外可见分光光度计和荧光光谱仪对所制样品进行测试,研究了样品的结构特性、成分和光学特性。X射线衍射结果表明,所制备的ZnO薄膜为六角纤锌矿结构;ZnO薄膜的EDS能谱图表明薄膜包含O元素和Zn元素;透射光谱表明ZnO薄膜质量高,在可见光范围内具有较高的透射率,平均透射率在85%以上;吸收光谱表明在带隙处存在吸收边;从PL光谱观察到了显著的紫外发射峰。     

Ce掺杂的WO_3薄膜的电学性质

在磁控溅射仪上用直流Ce和W共同磁控溅射方法,在载玻片上沉积Ce掺杂的WO_3,薄膜,以研究溅射功率对该薄膜电学性质的影响.薄膜在550℃的空气中退火1 h,用X射线衍射和扫描电子显微镜分析薄膜的显微结构.结果表明:Ce掺杂后薄膜呈岛状结构生长,有利于薄膜沿b轴方向生长;当Ce和W的溅射功率分别为40 W和160 W时,薄膜的非线性系数最大,达到7.92.     

三氧化钨薄膜的制备及其亲水/疏水性能转变研究

在预先用聚多巴胺薄膜处理的玻璃基底上,采用溶胶-凝胶法制备出三氧化钨(WO3)薄膜,用X射线衍射(XRD)和扫描电子显微镜(SEM)表征手段来分析其物相组成和形貌特征.对WO3薄膜在UV光照射下和黑暗的环境中发生亲水/疏水转换的现象进行研究,最后得出WO3薄膜表面润湿性转化的机理.     

退火温度对化学水浴沉积CdS薄膜性能的影响

采用化学水浴沉积法(CBD)制备了CdS薄膜,用扫描电镜(SEM)、能谱(EDS)、X射线衍射仪(XRD)、分光光度计进行检测.研究了退火温度对CdS薄膜表面形貌、成分、晶体结构和光学性能的影响.研究表明,CdS薄膜为微晶或是非晶态,S/Cd原子比在0.8左右,可见光透过率较高;随着退火温度的升高,薄膜结晶明显,但是透光率下降,禁带宽度范围在2.42～2.59eV之间.     

酞菁铜薄膜制备及其光学性能

采用真空蒸发的方法在ITO玻璃上制备了CuPc薄膜,并用分光光度计（U-3310）测试了四种不同厚度的CuPc薄膜的透射/吸收/反射率随波长变化情况,重点分析了其中的吸收规律.结果显示波段在340~370 nm和570~720 nm光吸收率基本上在90%左右,在480 nm吸收率最低,大部分光都已透射.同时用扫描电子显微镜对薄膜进行了成分分析,对照能谱图可以看出样品中含有碳、氧、铜等元素,与酞菁铜薄膜元素组成成分相符.     

三乙醇胺含量对化学浴法制备硫化铜薄膜的影响

为了研究三乙醇胺(TEA)在化学水域沉积法工艺中的作用,本文以氯化铜, 硫脲, 氨水和三乙醇胺为原料, 采用化学浴沉积法在玻璃基底表面成功制备了硫化铜薄膜. 研究了三乙醇胺不同含量对薄膜的厚度、结构,、形貌和光学性能的影响, 并分析了反应机理. 研究结果表明:三乙醇胺在反应中起到络合剂的作用,随着三乙醇胺含量的增加, 反应诱导时间延长到23 min; 沉积时间相同的情况下,组成薄膜的颗粒粒径变大且薄膜增厚240 nm, 同时透射率呈现出减小的趋势.      

Sol-Gel提拉法制备ZAO薄膜及其光电性能

采用溶胶-凝胶（Sol-Gel）浸渍提拉法（基于组装的小型提拉装置）在普通玻璃片上制备出ZnO：Al（ZAO）薄膜,利用扫描电子显微镜、紫外-可见分光光度计、数字式四探针测试仪等检测手段分别对其进行了分析比较。结果表明：Al^3＋浓度为1．0％的ZAO薄膜表面最为致密均匀;随着退火温度的提高,薄膜的晶体平均粒径明显增大,电阻率逐渐减小;不同掺Al量的ZAO薄膜在可见光区的平均透光率均在70％以上,当Al^3＋浓度为1．5％时,550℃退火2h,电阻率最小,为5．9×10^-2Ω·cm。     

Friction and wear performances of hot filament chemical vapor deposition multilayer diamond films coated on silicon carbide under water lubrication

Tribological properties of chemical vapor deposition (CVD) diamond films greatly affect its application in the mechanical field. In this paper, a novel multilayer structure is proposed, with which multilayer diamond films are deposited on silicon carbide by hot filament CVD (HFCVD) method. The different micrometric diamond grains are produced by adjusting deposition parameters. The as-deposited multilayer diamond films are characterized by scanning electron microscope (SEM) and white-light interferometry. The friction tests performed on a reciprocating ball-on-plate tribometer suggest that silicon carbide presents the friction coefficient of 0.400 for dry sliding against silicon nitride (Si₃N₄) ceramic counterface. With the water lubrication, the corresponding friction coefficients of silicon carbide and as-deposited multilayer diamond films further reduce to 0.193 and 0.051, respectively. The worn surfaces indicate that multilayer diamond films exhibit considerably high wear resistance.     

直流脉冲磁控溅射制备ITO薄膜及其光电性能

利用直流脉冲磁控溅射法在室温下制备ITO薄膜.通过台阶仪、紫外-可见分光光度计、四探针仪等表征技术,研究了沉积气压、溅射功率,以及Ar/O2流量比等对ITO薄膜沉积速率、光学性能,以及电学性能的影响.研究结果表明,薄膜沉积速率随沉积气压的增大而减小,随功率的增大而增大;方块电阻随气压的增大而增大,随功率的增大而减小;可见光平均透过率主要受O2流量的影响.在沉积气压为0.5 Pa,Ar/O2流量比为20∶0,溅射功率为250 W,膜厚为200 nm时,薄膜的方块电阻为27Ω/□,可见光平均透过率为84.1%.     

The Adhesion Improvement of Cubic Boron Nitride Film on High Speed Steel Substrate Implanted by Boron Element

Cubic boron nitride（c-BN） films were deposited on W6Mo5Cr4V2 high speed steel（HSS） substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by the bending beam method, scratch test, XPS and AFM. The experimental results show that the implantation of boron atom can reduce the internal stress and improve the adhesion strength of the films. The critical load of scratch test rises to 27.45 N, compared to 1.75 N of c-BN film on the unimplanted HSS. The AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. Then the composition of the boron implanted layer was analyzed by the XPS. And the influence of the boron implanted layer on the internal stress and adhesion strength of c-BN films were investigated.     

磁控反应溅射制备Ta—N薄膜的显微组织与畸变分析

利用直流磁控反应溅射技术制备了Ｔａ－Ｎ薄膜。利用ＴＥＭ、ＸＲＤ研究了薄膜显微组织及结构。研究结果，薄膜晶粒细小，可达到１０ｎｍ；在一定工艺条件下制备的Ｔａ－Ｎ薄膜为多相共存结构；磁控反应溅射制备Ｔａ－Ｎ薄膜，沉积压力对薄膜晶粒的显微畸变影响较大，沉积压力降低，晶粒显微畸变增加，导致薄膜中产生较大的微观应力。     

Mg掺杂的ZnO薄膜的带隙宽化

用溶胶-凝胶法分别在硅片和玻璃衬底上生长出了纯的和Mg掺杂的ZnO薄膜。通过对Mg掺杂的ZnO薄膜进行元素成分分析,证明Mg元素成功地掺入到ZnO晶格中。通过透射光谱,得到了其带隙能量,且大小随着掺杂浓度的增加而线性增大。在同样掺杂浓度下,从光致发光光谱得到的带隙能量略大于通过透射光谱计算的结果,但是两者的增长率非常接近。     

Fe24Mn4Al5Cr合金阳极钝化改性层的耐蚀性能

采用阳极钝化时效技术对Fe24Mn4Al5 Cr合金在1 mol/L Na2SO4溶液中、于620 mV电位下进行“内源”表面改性处理.利用电化学交流阻抗(EIS)测试技术和Zsimp Win软件拟合技术研究钝化时间对钝化膜稳定性的影响规律,并利用阳极极化测试技术研究阳极钝化改性层在NaCl溶液中的抗点蚀性能.研究结果表明:钝化15 min和3h改性层的EIS谱呈现偏移横轴的单容抗弧,电极反应过程的等效电路为R(QR),随钝化时间的增加,容抗弧直径增大,钝化膜电阻Rp增加.钝化5h时,改性层的Nyquist图呈现典型的Warburg阻抗,Rp增加了15 kΩ·cm2.其在不同Cl-浓度(0.3和0.5 mol/L)溶液中的阳极极化曲线均呈现自钝化-点蚀击穿过程,与原始合金相比,维钝电流密度减小,点蚀击穿电位升高,具有较好的抗点蚀性能.     

Effect of Cu Co-doping on the magnetism of Zn0.95Co0.05O films

Zn_0.95?x Co_0.05Cu _x O (atomic ratio, x = 0?C8%) thin films are fabricated on Si(111) substrate by reactive magnetron sputtering method. Detailed characterizations indicate that the doped Cu ions substitute the Zn²⁺ ions in ZnO lattice. The doped Cu ions are in +1 and +2 mixture valent state. The ferromagnetism of the Zn_0.95?x Co_0.05Cu _x O film increases gradually with the increase of the Cu⁺ ion concentration till x = 6%, but decreases for higher Cu concentration. Experimental results indicate that the increase of ferromagnetism is not owing to the magnetic contribution of Cu⁺ ions themselves, but owing to the enhancement of magnetic interaction between Co²⁺ ions, which suggests that p-type doping of Cu⁺ ions plays an important role in mediating the ferromagnetic coupling between Co ions.